전력전자학회지 (KIPE Magazine)

전력전자학회 (The Korean Institute of Power Electronics)
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질화갈륨 반도체 기반 차세대 전력 소자 기술

  • 김형탁 (홍익대 전자전기공학부)
  • 발행 : 2015.02.20
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초록

키워드

참고문헌

  1. 문재경 외, "GaN 전자소자 글로벌 연구개발 동향," 전자통신동향분석, 제27권, 제1호, pp.74-85, 2012년. https://doi.org/10.22648/ETRI.2012.J.270107
  2. O.Ambacher et al., "Two-dimensional electron gases induced by spontaneous and peizoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures," J. Appl. Phys., vol. 85, no. 6, pp.3222-3233, 1999. https://doi.org/10.1063/1.369664
  3. W. Saito, et al., "Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications," IEEE Trans. Electron Devices, vol. 53, no. 2, pp. 356-362, Feb. 2006. https://doi.org/10.1109/TED.2005.862708
  4. Y. Uemoto et al., "Gate injection transistor (GIT)-normally-off AlGaN/GaN power transistor using conductivity modulation," IEEE Trans. Electron Devices, vol. 54, no. 12, pp. 3393-3399, Dec. 2007. https://doi.org/10.1109/TED.2007.908601
  5. Y. Cai et al., "Control of threshold voltage of AlGaN/GaN HEMTs byfluoride-based plasma treatment: From depletion mode to enhancement mode," IEEE Trans. Electron Devices, vol. 53, no. 9, pp. 2207-2215, Sep. 2006. https://doi.org/10.1109/TED.2006.881054
  6. http://epc-co.com.
  7. H. Yoon et al., "Optimization of Field-plate AlGaN/GaNHFETs for High-voltage and High-frequency Operation," Journal of Korean. Phys. Soc. vol. 60, no. 1, pp. 113-117, Jan. 2012. https://doi.org/10.3938/jkps.60.113
  8. B. Park et al, "High Quality ICPCVD SiO2 for Normally-off AIGaN/GaN-on-Si Recessed MOSHFETs," IEEE Electron Device Letters, vol. 34, no. 3, pp.354-356, 2013. https://doi.org/10.1109/LED.2012.2236678
  9. W. Choi et al., "High-Voltage and Low-Leakage-Current Gate Recessed Normally-off GaN MISHEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2," IEEE Electron Dev. Lett., vol. 35, no. 2, pp. 175-177, 2014. https://doi.org/10.1109/LED.2013.2293579
  10. S. -W. Han et al., "Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterojunction field-effect transistor," Applied Physics Express, vol. 7, no. 11, p. 111002, 2014. https://doi.org/10.7567/APEX.7.111002
  11. J. A. del Alamo., "GaN HEMT Reliability," Microelectronic Trliab., vol. 49, pp.1200, 2009. https://doi.org/10.1016/j.microrel.2009.07.003
  12. H. Kim et al., "High-electric-field Induced Trap Generation in AlGaN/GaN Heterostructure Field-effect Transistors," Journal of Korean Phys. Soc., vol. 55, no. 2, pp. 666-670, Aug. 2009. https://doi.org/10.3938/jkps.55.666
  13. Yole Developpement, "Power GaN Market," Jun. 2014.