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Low Conversion Loss and High Isolation W-band MMIC Mixer Module

낮은 변환 손실 및 높은 격리 특성의 W-band MMIC 믹서 모듈

  • An, Dan (Defense Agency for Technology and Quality) ;
  • Rhee, Jin-Koo (Millimeter-wave INnovation Technology research center, Dongguk University)
  • 안단 (국방기술품질원 탑재장비전력팀) ;
  • 이진구 (동국대학교 밀리미터파 신기술 연구센터)
  • Received : 2014.09.17
  • Accepted : 2015.01.28
  • Published : 2015.02.25

Abstract

In this paper, we report on a high performance 94 GHz MMIC mixer module using 0.1-um metamorphic high electron mobility transistors (MHEMTs). A modified resistive mixer with a RF amplifier was proposed in this work for low conversion loss and high LO-RF isolation. The MMIC mixer module was fabricated using a MMIC chip and CPW-waveguide transitions. The fabricated mixer chip and module showed a low conversion loss of 6.3 dB and 9.5 dB, and LO-RF isolations of 24.8 and 30.4 dB at 94 GHz, respectively. This results are superior to those of previously W-band (75-110 GHz) MMIC mixers.

본 논문에서는 밀리미터파 센서 응용을 위한 낮은 변환손실 및 높은 LO-RF 격리도 특성의 W-band MMIC 믹서 모듈을 설계 및 제작하였다. MMIC 믹서는 $0.1{\mu}m$ MHEMT를 이용하여 설계 및 제작되었다. MMIC 믹서는 낮은 변환손실과 높은 LO-RF 격리도 특성을 얻기 위해 RF 입력단에 MHEMT를 추가하여 설계하였다. 제작된 MMIC 칩을 모듈화 하기 위해 CPW-도파관 변환기를 설계 및 제작하였으며, 최종적으로 MMIC 믹서 모듈을 개발하였다. MMIC 믹서 모듈의 측정결과 변환손실 특성은 94 GHz에서 MMIC 칩은 6.3 dB, MMIC 모듈은 9.5 dB의 양호한 특성을 나타내었다. MMIC 믹서 모듈의 LO-RF 격리도는 94 GHz에서 30.4 dB의 양호한 측정 결과를 얻었다. 본 논문에서 개발된 W-band MMIC 믹서모듈은 기존의 발표된 W-band(75-110 GHz) MMIC 믹서와 비교하여 우수한 성능을 나타내었다.

Keywords

References

  1. Dan An, Sung-Chan Kim, Jung-Dong Park, Mun-Kyo Lee, Hyun-Chang Park, Sam Dong Kim, Wan-Joo Kim, and Jin Koo Rhee, "A Novel 94-GHz MHEMT Resistive Mixer Using a Micromachined Ring," IEEE Microwave and Wireless Components Lett., vol. 16, no. 8, pp. 467-469, Aug. 2006. https://doi.org/10.1109/LMWC.2006.879482
  2. Sung Chan Kim, Dan An, Byeong Ok Lim, Tae Jong Baek, Dong Hoon Shin, and Jin Koo Rhee, "High-Performance 94-GHz Single Balanced Mixer Using 70-nm MHEMTs and Surface Micromachined Technology," IEEE Elec. Device Lett., vol. 27, no. 1, pp. 28-30, Jan. 2006. https://doi.org/10.1109/LED.2005.861403
  3. Dan An, Bok-Hyung Lee, Byeong Ok Lim, Mun-Kyo Lee, Sung-Chan Kim, Jung-Hun Oh, Sam Dong Kim, Hyung-Moo Park, Dong-Hoon Shin, and Jin Koo Rhee, "High Switching Performance 0.1-um Metamorphic HEMT for Low Conversion Loss 94-GHz Resistive," IEEE Elec. Device Lett., vol. 26, no. 10, pp. 707-709, Jan. 2006.
  4. Bok-Hyung Lee, Sam-Dong Kim, and Jin-Koo Rhee, "Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1-um Off-Set ${\Gamma}$-Shaped Gate InGaAs/InAlAs/GaAs metamorphic High Electron Mobility Transistors," Jpn. J. Appl. Phys., vol. 43, pp.1914-1918, 2004. https://doi.org/10.1143/JJAP.43.1914
  5. Masayuki Kimishima, Tsuyoshi Ataka, and Hideyuki Okabe, "A Family of Q, V and W-band Monolithic Resistive Mixers," in 2001 IEEE MTT-S Dig., pp. 115-118.
  6. K. W. Chang, E. W. Lin, H. Wang, K. L. Tan, and W. H. Ku, "A W-band Monolithic, Singly Balanced Resistive Mixer With Low Conversion Loss," IEEE Microwave Guided Wave Lett., vol. 4, no. 9, pp. 301-302, Sep. 1994. https://doi.org/10.1109/75.311514
  7. Eric W. Lin, and Walter H. Ku, "Device Considerations and Modeling for the Design of an InP-Based MODFET Millimeter-Wave Resistive Mixer with Superior Conversion Efficiency," IEEE Trans. Microwave Theory Tech., vol. 43, no. 8, pp. 1951-1959, Aug. 1995. https://doi.org/10.1109/22.402285
  8. A. R. Barnes, P. Munday, R. Jennings, and M.T. Moore, "A comparison of W-band monolithic resistive mixer architectures," in 2002 IEEE MTT-S Dig., pp. 1867-1870.