ETRI Journal

  • 제36권3호
  • /
  • Pages.498-501
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  • 2014
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  • 1225-6463(pISSN)
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  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
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A Compact C-Band 50 W AlGaN/GaN High-Power MMIC Amplifier for Radar Applications

  • Jeong, Jin-Cheol (Broadcasting & Telecommunications Media Research Laboratory, ETRI) ;
  • Jang, Dong-Pil (Broadcasting & Telecommunications Media Research Laboratory, ETRI) ;
  • Han, Byoung-Gon (Radar Group, RFHIC Corporation) ;
  • Yom, In-Bok (Broadcasting & Telecommunications Media Research Laboratory, ETRI)
  • 투고 : 2013.08.27
  • 심사 : 2013.11.05
  • 발행 : 2014.06.01
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초록

A C-band 50 W high-power microwave monolithic integrated circuit amplifier for use in a phased-array radar system was designed and fabricated using commercial $0.25{\mu}m$ AlGaN/GaN technology. This two-stage amplifier can achieve a saturated output power of 50 W with higher than 35% power-added efficiency and 22 dB small-signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact $14.82mm^2$ chip area, an output power density of $3.2W/mm^2$ is demonstrated.

키워드

참고문헌

  1. C. Costrini et al., "50W X-Band GaN MMIC HPA: Effective Power Capability and Transient Thermal Analysis," Proc. European Microw. Integ. Circuits. Conf., Paris, France, Sept. 27-28, 2010, pp. 408-411.
  2. C. Florian et al., "A C-Band AlGaN-GaN MMIC HPA for SAR," IEEE Microw. Wireless. Compon. Lett., vol. 22, no. 9, Sept. 2012, pp. 471-473. https://doi.org/10.1109/LMWC.2012.2212238
  3. Cree, CMPA5585025D, Data sheet. Accessed Aug. 13, 2013. http://www.cree.com/-/media/Files/Cree/RF/Data%20Sheets/C MPA5585025D.pdf
  4. TriQuint, TGA2576-FL Data Sheet. Accessed Aug. 13, 2013. http://www.triquint.com/products/p/TGA2576-FL
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  6. J.-C. Jeong, D.-P. Jang, and I.-B. Yom, "A Ka-Band 6-W High Power MMIC Amplifier with High Linearity for VSAT Applications," ETRI J., vol. 35, no. 3, June 2013, pp. 546-549. https://doi.org/10.4218/etrij.13.0212.0407
  7. M.R. DeHaan et al., "A 15-Watt Dual Band HBT MMIC Power Amplifier," IEEE MTT-S Int. Microw. Symp. Dig., Denver, CO, USA, vol. 3, June 8-13, 1997, pp. 1425-1427.
  8. S. Lavanga et al., "High Voltage Breakdown pHEMTs for CBand HPA," Proc. European Microw. Integ. Circuits Conf., Paris, France, Sept. 27-28, 2010, pp. 142-145.

피인용 문헌

  1. Full-band transition from substrate integrated waveguide to rectangular waveguide vol.51, pp.14, 2014, https://doi.org/10.1049/el.2015.0939
  2. Highly Integrated C-Band GaN High Power Amplifier MMIC for Phased Array Applications vol.25, pp.6, 2014, https://doi.org/10.1109/lmwc.2015.2421316
  3. Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET vol.38, pp.4, 2016, https://doi.org/10.4218/etrij.16.0015.0040
  4. AlGaN/GaN Based Ultra-wideband 15-W High-Power Amplifier with Improved Return Loss vol.38, pp.5, 2016, https://doi.org/10.4218/etrij.16.2615.0020