References
- R. Mohan Sankaran (Ed.), Plasma processing of nanomaterials (CRC Press, Florida, 2012), pp. 1-54.
- S. J. Pearton. and D. P. Norton, Plasma Process. Polym. 2, 16 (2005) https://doi.org/10.1002/ppap.200400035
- P. Mishra, Harsh and S.S. Islam, Superlattice Microst. 64, 399 (2013) https://doi.org/10.1016/j.spmi.2013.10.010
- J. M. Stilahn, K. J Trevino and E. R. Fisher, Annu. Rev. Anal. Chem. 1, 261 (2008) https://doi.org/10.1146/annurev.anchem.1.031207.112953
- M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (Wiley-Interscience, New Jersey, 2005), pp. 387-534.
- A. Grill, Cold Plasma in Materials Fabrication: From Fundamentals to Applications (IEEE PRESS, New York, 1994), pp. 114-150.
- C. M. Chou, C. C. Chuang, C. H. Lin, C. J. Chung and J. L. He, Surf. Coat. Tech. 205, 4880 (2011) https://doi.org/10.1016/j.surfcoat.2011.04.074
- V. Kudrle, P. Vasina, A. Talsky, M. Mrazkova, O. Stec and J. Janca, J. Phys. D: Appl. Phys. 43, 124020 (2010) https://doi.org/10.1088/0022-3727/43/12/124020
- E. Karakas, V. M. Donnelly and D. J. Economou, J. Appl. Phys. 113, 213301 (2013) https://doi.org/10.1063/1.4807298
- X. Z. Jiang, Y. X. Liu, S. Yang, W. Q. Lu, Z. H. Bi, X. S. Li and Y. N. Wang, J. Vac. Sci. Technol. A, 29, 011006 (2011)
- V. I. Demidov, S. V. Ratynskaia and K. Rypdal, Rev. Sci. Instrum. 73, 3409 (2002) https://doi.org/10.1063/1.1505099
- J. Joo, Applied Science & Convergence Technology 23, 161 (2014) https://doi.org/10.5757/ASCT.2014.23.4.161
- H. Lee and J. Jung, J. Korean Vac. Soc. 21, 121 (2012) https://doi.org/10.5757/JKVS.2012.21.3.121
- A. J. Izenman, Modern Multivariate Statistical Techniques (Springer Science + Business Media, New York, 2008), pp. 107-313, 407-504, 597-632.
- Gil Su Son, Yong Han Roh, Geum. Young. Yeom, Su Hong Kim, Myoung Woon Kim, Hyung Chul Cho, J. Korean Vac. Soc. 20, 416 (2011) https://doi.org/10.5757/JKVS.2011.20.6.416
- S. A. Linnik and A. V. Gaydaychuk, Vacuum, 103, 28 (2014) https://doi.org/10.1016/j.vacuum.2013.12.001
- G. S. Selwyn, AVS monograph series: Optical diagnostic techniques for plasma processing, edited by Woody weed (AVS Press, New Work, 1993), pp 27-80.
- Verity Instruments http://www.verityinst.com/pdfs/ Applications_Information.pdf
- K. Han, E. S. Yoon, J. Lee, H. Chae, K. H. Han and K. J. Park, Ind. Eng. Chem. Res. 47, 3907 (2008) https://doi.org/10.1021/ie070930s
- P. L. S. Thamban, S. Yun, G. Padron-Wells, J. W. Hosch and M. J. Goeckner, J. Vac. Sci. Technol. A, 30, 061303 (2012) https://doi.org/10.1116/1.4756694
- K. Han, K. J. Park, H. Chae and E. S. Yoon, Korean J. Chem. Eng. 25, 13 (2008) https://doi.org/10.1007/s11814-008-0003-8
- J. W. Coburn and M. Chen, J. Appl. Phys. 51, 3134 (1980) https://doi.org/10.1063/1.328060
- R. d'Agostino, F. Cramarossa, S. D. Benedictis and G. Ferraro, J. Appl. Phys. 52, 1259 (1981) https://doi.org/10.1063/1.329748
- T. Czerwiec, F. Greer and D. B. Graves, J. Phys. D: Appl. Phys. 38, 4278 (2005) https://doi.org/10.1088/0022-3727/38/24/003
- M. Kanoh, M. Yamage and H. Takada, Jpn. J. Appl. Phys. 40, 1457 (2001) https://doi.org/10.1143/JJAP.40.1457
- V. M. Donnelly and A. Kornblit, J. Vac. Sci. Technol. A. 31, 050825 (2013) https://doi.org/10.1116/1.4819316
- G. Y. Yeom, Plasma Etching Technology, (Miraecom Press, Seoul, 2006), pp 380-394.
- K. Ukai and K. Hanazawa, J. Vac. Sci. Technol. 16, 385 (1979) https://doi.org/10.1116/1.569956
- G. Fortunato, J. Phys. E Sci. Instrum. 20, 1051 (1987) https://doi.org/10.1088/0022-3735/20/8/020
- V. Patel, B. Singh and J. H. Thomas III, Appl. Phys. Lett. 61, 1912 (1992) https://doi.org/10.1063/1.108361
- M. N. A. Dewan, P. J. McNally, T. Perova and P. A. F. Herbert, Microelectron. Eng. 65, 25 (2003) https://doi.org/10.1016/S0167-9317(02)00727-X
- P. Dubreuil and D. Belharet, Microelectron. Eng. 87, 2275 (2010) https://doi.org/10.1016/j.mee.2010.03.003
- H. L. Maynard, E. A. Rietman, J. T. C. Lee and D. E. Ibbotson, J. Electrochem. Soc. 143, 2029 (1996) https://doi.org/10.1149/1.1836944
- J. L. Kleber and L. J. Overzet, Plasma Source Sci. Technol. 8, 534 (1999) https://doi.org/10.1088/0963-0252/8/4/303
- M. A. Sobolewski, J. Appl. Phys. 100, 063310 (2006) https://doi.org/10.1063/1.2353203
- M. A. Sobolewski and D. L. Lahr, J. Vac. Sci. Technol. A, 30, 051303 (2012) https://doi.org/10.1116/1.4737615
- M. A, Sobolewski, J. Vac. Sci. Technol. A, 24, 1892 (2006) https://doi.org/10.1116/1.2335862
- H. Jang, J. Nam, C. K. Kim and H. Chae, Plasma Process. Polym. 10, 850 (2013)
- S. J. Qin, J. Chemometr. 17, 480 (2003) https://doi.org/10.1002/cem.800
Cited by
- Effect of Dual Radio Frequency Bias Power on SiO2 Sputter Etching in Inductively Coupled Plasma vol.12, pp.02, 2017, https://doi.org/10.1142/S1793292017500254