JSTS:Journal of Semiconductor Technology and Science

  • 제14권5호
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  • Pages.682-687
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  • 2014
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Temperature-Dependent Instabilities of DC characteristics in AlGaN/GaN-on-Si Heterojunction Field Effect Transistors

  • Keum, Dong-Min (School of Electronic and Electrical Engineering, Hongik University) ;
  • Choi, Shinhyuk (School of Electronic and Electrical Engineering, Hongik University) ;
  • Kang, Youngjin (School of Electronic and Electrical Engineering, Hongik University) ;
  • Lee, Jae-Gil (School of Electronic and Electrical Engineering, Hongik University) ;
  • Cha, Ho-Young (School of Electronic and Electrical Engineering, Hongik University) ;
  • Kim, Hyungtak (School of Electronic and Electrical Engineering, Hongik University)
  • 투고 : 2014.06.30
  • 심사 : 2014.08.11
  • 발행 : 2014.10.30
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초록

We have performed reverse gate bias stress tests on AlGaN/GaN-on-Si Heterostructure FETs (HFETs). The shift of threshold voltage ($V_{th}$) and the reduction of on-current were observed from the stressed devices. These changes of the device parameters were not permanent. We investigated the temporary behavior of the stressed devices by analyzing the temperature dependence of the instabilities and TCAD simulation. As the baseline temperature of the electrical stress tests increased, the changes of the $V_{th}$ and the on-current were decreased. The on-current reduction was caused by the positive shift of the $V_{th}$ and the increased resistance of the gate-to-source and the gate-to-drain access region. Our experimental results suggest that electron-trapping effect into the shallow traps in devices is the main cause of observed instabilities.

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참고문헌

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