Transactions on Electrical and Electronic Materials

  • 제15권4호
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  • Pages.198-200
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  • 2014
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Influence of ZnO Thickness on the Optical and Electrical Properties of GZO/ZnO Bi-layered Films

  • Kim, Sun-Kyung (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, So-Young (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Seung-Hong (School of Materials Science and Engineering, University of Ulsan) ;
  • Jeon, Jae-Hyun (School of Materials Science and Engineering, University of Ulsan) ;
  • Gong, Tae-Kyung (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Daeil (School of Materials Science and Engineering, University of Ulsan) ;
  • Yoon, Dae Young (Dongkook Ind. Co., Ltd.) ;
  • Choi, Dong Yong (Dongkook Ind. Co., Ltd.)
  • 투고 : 2014.02.27
  • 심사 : 2014.06.02
  • 발행 : 2014.08.25
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초록

100 nm thick Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on polyethylene terephthalate (PET) and ZnO coated PET substrate and then the effect of the ZnO thickness on the optical and electrical properties of the GZO films was investigated. GZO single layer films had an optical transmittance of 83.7% in the visible wavelength region and a sheet resistance of $2.41{\Omega}/{\square}$, while the optical and electrical properties of the GZO/ZnO bi-layered films were influenced by the thickness of the ZnO buffer layer. GZO films with a 20 nm thick ZnO buffer layer showed a lower sheet resistance of $1.45{\Omega}/{\square}$ and an optical transmittance of 85.9%. As the thickness of ZnO buffer layer in GZO/ZnO bi-layered films increased, both the conductivity and optical transmittance in the visible wavelength region were increased. Based on the figure of merit (FOM), it can be concluded that the ZnO buffer layer effectively increases the optical and electrical performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

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참고문헌

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피인용 문헌

  1. Influence of ZnO buffer layer on the electrical, optical and surface properties of Ga-doped ZnO films vol.705, 2017, https://doi.org/10.1016/j.jallcom.2017.01.172
  2. Enhancement of Ga-doped zinc oxide film properties and deposition rate by multiple deposition using atmosphere pressure plasma jet vol.694, 2017, https://doi.org/10.1016/j.jallcom.2016.09.320
  3. Influence of TiO2 Buffer Layer on the Electrical and Optical Properties of IGZO/TiO2 Bi-layered Films vol.28, pp.6, 2015, https://doi.org/10.12656/jksht.2015.28.6.291