한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제27권7호
  • /
  • Pages.472-476
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  • 2014
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Mg0.1Zn0.9O/ZnO 활성층 구조의 박막트랜지스터 연구

A Study of Thin-Film Transistor with Mg0.1Zn0.9O/ZnO Active Structure

  • 이종훈 (한국해양대학교 나노반도체공학과) ;
  • 김홍승 (한국해양대학교 나노반도체공학과) ;
  • 장낙원 (한국해양대학교 전기전자공학부) ;
  • 윤영 (한국해양대학교 전파공학과)
  • Lee, Jong Hoon (Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University) ;
  • Kim, Hong Seung (Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University) ;
  • Jang, Nak Won (Division of Electrical and Electronics Engineering, Korea Maritime and Ocean University) ;
  • Yun, Young (Department of Radio Communication Engineering, Korea Maritime and Ocean University)
  • 투고 : 2013.12.30
  • 심사 : 2014.06.23
  • 발행 : 2014.07.01
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초록

We report the characteristics of thin-film transistor (TFT) to make the bi-channel structure with stacked $Mg_{0.1}Zn_{0.9}O$ (Mg= 10 at.%) and ZnO. The ZnO and $Mg_{0.1}ZnO_{0.9}O$ thin films were deposited by radio frequency (RF) co-sputter system onto the thermally oxidized silicon substrate. A total thickness of active layer was 50 nm. Firstly, the ZnO thin films were deposited to control the thickness from 5 nm to 30 nm. Sequentially, the $Mg_{0.1}ZnO_{0.9}O$ thin films were deposited to change from 45 nm to 20 nm. The bi-layer TFT shows more improved properties than the single layer TFT. The field effect mobility and subthreshold slope for $Mg_{0.1}ZnO_{0.9}O$/ZnO-TFT are $7.40cm^2V^{-1}s^{-1}$ and 0.24 V/decade at the ZnO thickness of 10 nm, respectively.

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