GaN HPA MMIC 기술 동향

  • Published : 2014.03.31

Abstract

Keywords

References

  1. Nicholas J. Kolias et al., "GaN technology for microwave and millimeter wave applications", IEEE MTT-S IMS, 2010.
  2. 지홍구 et al., "GaN, GaAs MMIC 개발 및 전망", 전자통신동향분석 26(4), 2011년 8월.
  3. R. Vetury, "GaN : Applications in RF system beyond the PA", RFMD, Mar. 2010.
  4. Umesh K. Mishra et al., "AlGaN/GaN HEMTs-An overview of device operation and applications", Proceedings of the IEEE, vol. 90, no. 6, pp. 1022-1031, Jun. 2002.
  5. 문재경, "GaN 파워디바이스 국내외 연구개발 동 향 및 향후 발전전망", 한국세라믹학회, 세라미스트 16(4), pp 53-66, 2013년 12월.
  6. S. Chen et al., "A compact 70 watt power amplifier MMIC utilizing S-band GaN on SiC HEMT process", IEEE CSICS, 2012.
  7. O. Jardel et al., "A 30 W, 46 % PAE S-band GaN MMIC power amplifier for radar applications", Proceedings of the 7th EuMC, pp. 639-642, Oct. 2012.
  8. M. van Wanum et al., "GaN C-band HPA for phased- array applications", IEEE CSICS, 2013.
  9. C. Florian et al., "A 40 watt C-band MMIC high power amplifier for space radar application exploiting a 0.25um AlGaN/GaN on SiC process", IEEE MTT-S IMS, 2013.
  10. S. Piotrowicz et al., "43 W, 52 % PAE X-band Al- GaN/GaN HEMTs MMIC amplifiers", IEEE MTTS IMS, 2010.
  11. http://www.mitsubishielectric.com/news/2014/pdf/0120. pdf
  12. E. Kuwata et al., "C-Ku ultra broadband GaN MMIC amplifier with 20 W output power", APMC, pp. 1558-1561, 2011.
  13. http://www.toshiba.com/taec/news/press_releases/2012/mwrf_12_638.jsp
  14. C. F. Cambell et al., "High efficiency Ka-band gallium nitride power amplifier MMICs", IEEE COMCAS, 2013.
  15. J. Lee et al., "A Doherty power amplifier with a GaN MMIC for femtocell base stations", IEEE MWCL, 2014.