Current Photovoltaic Research

  • 제2권3호
  • /
  • Pages.120-123
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  • 2014
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  • 2288-3274(pISSN)
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  • 2508-125X(eISSN)
한국태양광발전학회 (Korea Photovoltaic Society)
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대기압 플라즈마를 이용한 P타입 태양전지 웨이퍼 도핑 연구

Study of P-type Wafer Doping for Solar Cell Using Atmospheric Pressure Plasma

  • 윤명수 (광운대학교 전자 바이오 물리학과) ;
  • 조태훈 (광운대학교 전자 바이오 물리학과) ;
  • 박종인 (광운대학교 전자 바이오 물리학과) ;
  • 김상훈 (광운대학교 전자 바이오 물리학과) ;
  • 김인태 (광운대학교 화학과) ;
  • 최은하 (광운대학교 전자 바이오 물리학과) ;
  • 조광섭 (광운대학교 전자 바이오 물리학과) ;
  • 권기청 (광운대학교 전자 바이오 물리학과)
  • Yun, Myoungsoo (Department of Electrical and Biological Physics, Kwangwoon University) ;
  • Jo, Taehun (Department of Electrical and Biological Physics, Kwangwoon University) ;
  • Park, Jongin (Department of Electrical and Biological Physics, Kwangwoon University) ;
  • Kim, Sanghun (Department of Electrical and Biological Physics, Kwangwoon University) ;
  • Kim, In Tae (Department of Chemistry, Kwangwoon University) ;
  • Choi, Eun Ha (Department of Electrical and Biological Physics, Kwangwoon University) ;
  • Cho, Guangsup (Department of Electrical and Biological Physics, Kwangwoon University) ;
  • Kwon, Gi-Chung (Department of Electrical and Biological Physics, Kwangwoon University)
  • 투고 : 2014.07.18
  • 심사 : 2014.09.13
  • 발행 : 2014.09.30
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초록

Thermal doping method using furnace is generally used for solar-cell wafer doping. It takes a lot of time and high cost and use toxic gas. Generally selective emitter doping using laser, but laser is very high equipment and induce the wafer's structure damage. In this study, we apply atmospheric pressure plasma for solar-cell wafer doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (1 kHz ~ 100 kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer (120 ohm/square). SIMS (Secondary Ion Mass Spectroscopy) are used for measuring wafer doping depth and concentration of phosphorus. We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

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