Current Photovoltaic Research
- 제2권3호
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- Pages.103-109
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- 2014
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- 2288-3274(pISSN)
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- 2508-125X(eISSN)
DOI QR Code
유연기판을 이용한 고효율 나노결정질 실리콘 박막 태양전지 제조
Fabrication of Highly Efficient Nanocrystalline Silicon Thin-Film Solar Cells Using Flexible Substrates
- 장은석 (태양광연구실, 한국에너지기술연구원) ;
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김솔지
(태양광연구실, 한국에너지기술연구원) ;
- 이지은 (태양광연구실, 한국에너지기술연구원) ;
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안승규
(태양광연구실, 한국에너지기술연구원) ;
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박주형
(태양광연구실, 한국에너지기술연구원) ;
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조준식
(태양광연구실, 한국에너지기술연구원)
- Jang, Eunseok (Photovoltaic Laboratory, Korea Institute of Energy Research) ;
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Kim, Sol Ji
(Photovoltaic Laboratory, Korea Institute of Energy Research) ;
- Lee, Ji Eun (Photovoltaic Laboratory, Korea Institute of Energy Research) ;
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Ahn, Seung Kyu
(Photovoltaic Laboratory, Korea Institute of Energy Research) ;
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Park, Joo Hyung
(Photovoltaic Laboratory, Korea Institute of Energy Research) ;
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Cho, Jun-Sik
(Photovoltaic Laboratory, Korea Institute of Energy Research)
- 투고 : 2014.08.05
- 심사 : 2014.08.18
- 발행 : 2014.09.30
초록
Highly efficient hydrogenated nanocrystalline silicon (nc-Si:H) thin-film solar cells were prepared on flexible stainless steel substrates using plasma-enhanced chemical vapor deposition. To enhance the performance of solar cells, material properties of back reflectors, n-doped seed layers and wide bandgap nc-SiC:H window layers were optimized. The light scattering efficiency of Ag back reflectors was improved by increasing the surface roughness of the films deposited at elevated substrate temperatures. Using the n-doped seed layers with high crystallinity, the initial crystal growth of intrinsic nc-Si:H absorber layers was improved, resulting in the elimination of the defect-dense amorphous regions at the n/i interfaces. The nc-SiC:H window layers with high bandgap over 2.2 eV were deposited under high hydrogen dilution conditions. The vertical current flow of the films was enhanced by the formation of Si nanocrystallites in the amorphous SiC:H matrix. Under optimized conditions, a high conversion efficiency of 9.13% (