Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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A Polysilicon Field Effect Transistor Pressure Sensor of Thin Nitride Membrane Choking Effect of Right After Turn-on for Stress Sensitivity Improvement

스트레스 감도 향상을 위한 턴 온 직후의 조름 효과를 이용한 얇은 질화막 폴리실리콘 전계 효과 트랜지스터 압력센서

  • Jung, Hanyung (Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University) ;
  • Lee, Junghoon (Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University)
  • 정한영 (서울대학교 융합과학기술대학원 나노융합학과) ;
  • 이정훈 (서울대학교 융합과학기술대학원 나노융합학과)
  • Received : 2013.12.23
  • Accepted : 2014.02.25
  • Published : 2014.03.31
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Abstract

We report a polysilicon active area membrane field effect transistor (PSAFET) pressure sensor for low stress deflection of membrane. The PSAFET was produced in conventional FET semiconductor fabrication and backside wet etching. The PSAFET located at the front side measured pressure change using 300 nm thin-nitride membrane when a membrane was slightly strained by the small deflection of membrane shape from backside with any physical force. The PSAFET showed high sensitivity around threshold voltage, because threshold voltage variation was composed of fractional function form in sensitivity equation of current variation. When gate voltage was biased close to threshold voltage, a fractional function form had infinite value at $V_{tn}$, which increased the current variation of sensitivity. Threshold voltage effect was dominant right after the PSAFET was turned on. Narrow transistor channel established by small current flow was choked because electron could barely cross drain-source electrodes. When gate voltage was far from threshold voltage, threshold voltage effect converged to zero in fractional form of threshold voltage variations and drain current change was mostly determined by mobility changes. As the PSAFET fabrication was compatible with a polysilicon FET in CMOS fabrication, it could be adapted in low pressure sensor and bio molecular sensor.

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References

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