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Influence of Film Thickness on the Structural, Electrical and Optical Properties of the GZO/ZnO Films

GZO/ZnO 적층박막의 두께변화에 따른 구조적, 전기적, 광학적 물성 변화

  • Kim, Seung-Hong (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Sun-Kyung (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, So-Young (School of Materials Science and Engineering, University of Ulsan) ;
  • Jeon, Jae-Hyun (School of Materials Science and Engineering, University of Ulsan) ;
  • Gong, Tae-Kyung (School of Materials Science and Engineering, University of Ulsan) ;
  • Choi, Dong-Hyuk (Dongkook Ind. Co., Ltd.) ;
  • Son, Dong-Il (Dongkook Ind. Co., Ltd.) ;
  • Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
  • Received : 2013.11.15
  • Accepted : 2013.12.09
  • Published : 2014.01.30

Abstract

Ga doped ZnO (GZO) single layer and GZO/ZnO bi-layered films were deposited on glass substrates by radio frequency magnetron sputtering and then the influence of film thickness on the structural, electrical, and optical properties of the films was considered. Thicknesses of the GZO/ZnO films was varied as GZO 100 nm, GZO 85 nm/ZnO 15 nm and GZO 70 nm/ZnO 30 nm, respectively. The observed result means that optical transmittance and electrical resistivity of the films were influenced with film thickness and GZO 85 nm/ZnO 15 nm bilayered films show the higher figure of merit than that of the films prepared other films in this study.

Keywords

References

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