Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fast Switching Properties of TN Cell With Graphene Quantum Dots

그라핀 양자점을 도핑한 TN 셀의 고속 스위칭 특성

  • 김대현 (연세대학교 그린기술연구원)
  • Received : 2013.10.28
  • Accepted : 2014.01.24
  • Published : 2014.02.01
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Abstract

In this study, we report the doping effect of graphene quantum dots (QDs) in nematic liquid crystal (NLC) system on rubbed polyimide (PI) surface. The good LC alignment and high thermal stability in QD-LC cell system on rubbed PI surfaces can be measured. Also, the low threshold voltage of QD-TN cell was observed about 2.77 V. The fast response time of 13.2 ms for QD-TN cell can be achieved. Finally, the good voltage holding ratio of QD-TN cell on rubbed PI surface was measured.

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References

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