Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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The Effect of Grain Size on the Stress Shift toward Tensile Side by Deposition Interruptions in Copper Thin Films

구리 박막 제조중 증착 중단시 박막 결정립 크기 변화가 인장응력 방향으로의 응력 이동에 미치는 영향

  • Lee, Seri (Department of Materials Science and Engineering, Chonnam National University) ;
  • Oh, Seungkeun (Department of Materials Science and Engineering, Chonnam National University) ;
  • Kim, Youngman (Department of Materials Science and Engineering, Chonnam National University)
  • 이세리 (전남대학교 신소재공학부) ;
  • 오승근 (전남대학교 신소재공학부) ;
  • 김영만 (전남대학교 신소재공학부)
  • Received : 2014.07.28
  • Accepted : 2014.12.09
  • Published : 2014.12.31
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Abstract

In this study, the average in-situ stress in metallic thin film was measured during deposition of the Cu thin films on the Si(111) wafer and then the phenomenon of stress shift by the interruption of deposition was measured using Cu thin films. We have observed the stress shift in accordance with changing amount of atom's movement between the surface and grain boundary through altering the grain size of the Cu thin film with variety of parameters. The grain size is known to be affected on the deposition rate, film thickness and deposition temperature. As a experimental results, the these parameters was not adequate to explain stress shift because these parameters affect directly on the amount of atom's movement between the surface and grain boundary as well as the grain size. Thus, we have observed the stress shift toward tensile side in accordance with the grain size changing through the interlayer deposition. From an experiment with inserting interlayer before deposit Cu, in thin film which has big grain size with high roughness, amount of stress movement is higher along direction of tensile stress after deposition that means, after deposition process, driving force of atoms moving in grain boundary and on the surface of the film is relatively higher than before.

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