한국전자파학회논문지 (The Journal of Korean Institute of Electromagnetic Engineering and Science)

  • 제25권12호
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  • Pages.1236-1242
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  • 2014
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  • 1226-3133(pISSN)
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  • 2288-226X(eISSN)
한국전자파학회 (The Korean Institute of Electromagnetic Engineering and Science)
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푸쉬-푸쉬 방식을 이용한 CMOS 기반 D-밴드 전압 제어 발진기

CMOS Based D-Band Push-Push Voltage Controlled Oscillator

  • 정승윤 (고려대학교 전기전자공학과) ;
  • 윤종원 (고려대학교 전기전자공학과) ;
  • 김남형 (고려대학교 전기전자공학과) ;
  • 이재성 (고려대학교 전기전자공학과)
  • Jung, Seungyoon (School of Electrical Engineering, Korea University) ;
  • Yun, Jongwon (School of Electrical Engineering, Korea University) ;
  • Kim, Namhyung (School of Electrical Engineering, Korea University) ;
  • Rieh, Jae-Sung (School of Electrical Engineering, Korea University)
  • 투고 : 2014.09.26
  • 심사 : 2014.11.05
  • 발행 : 2014.12.31
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초록

본 연구에서는 65-nm CMOS 공정을 이용하여 D-밴드 주파수 대역(110~170 GHz)의 전압 제어 발진기(voltage controlled oscillator)를 제작 및 측정을 수행하였다. 발진기의 구조는 푸쉬-푸쉬(push-push) 방식에 기반을 두고 있다. 제작된 전압 제어 발진기의 동작 주파수의 범위는 152.7~165.8 GHz로 측정되었으며 이때의 출력 전력은 -17.3 dBm에서 -8.7 dBm까지의 값을 보였다. 이 회로의 위상잡음(phase noise)은 10 MHz 오프셋에서 -90.9 dBc/Hz로 측정되었고, 측정용 패드를 포함한 제작된 칩의 크기는 $470{\mu}m{\times}360{\mu}m$이다.

In this work, a D-band VCO(Voltage Controlled Oscillator) has been developed in a 65-nm CMOS technology. The circuit was designed based on push-push mechanism. The output oscillation frequency of the fabricated VCO varied from 152.7 GHz to 165.8 GHz, and the measured output power was from -17.3 dBm to -8.7 dBm. A phase noise of -90.9 dBc/Hz is achieved at 10 MHz offset. The chip size of the circuit is $470{\mu}m{\times}360{\mu}m$ including the probing pads.

키워드

참고문헌

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