Advances in nano research

  • 제1권4호
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  • Pages.203-210
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  • 2013
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  • 2287-237X(pISSN)
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  • 2287-2388(eISSN)
테크노프레스 (Techno-Press)
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Electron spin relaxation control in single electron QDs

  • Mashayekhi, M.Z. (School of Engineering Emerging-Technologies, University of Tabriz) ;
  • Abbasian, K. (School of Engineering Emerging-Technologies, University of Tabriz) ;
  • Shoar-Ghaffari, S. (School of Engineering Emerging-Technologies, University of Tabriz)
  • 투고 : 2013.03.07
  • 심사 : 2013.10.26
  • 발행 : 2013.12.25
⟨ 이전 논문 다음 논문 ⟩

초록

So far, all reviews and control approaches of spin relaxation have been done on lateral single electron quantum dots. In such structures, many efforts have been done, in order to eliminate spin-lattice relaxation, to obtain equal Rashba and linear Dresselhaus parameters. But, ratio of these parameters can be adjustable up to 0.7 in a material like GaAs under high-electric field magnitudes. In this article we have proposed a single electron QD structure, where confinements in all of three directions are considered to be almost identical. In this case the effect of cubic Dresselhaus interaction will have a significant amount, which undermines the linear effect of Dresselhaus while it was destructive in lateral QDs. Then it enhances the ratio of the Rashba and Dresselhaus parameters in the proposed structure as much as required and decreases the spin states up and down mixing and the deviation angle from the net spin-down As a result to the least possible value.

키워드

참고문헌

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