Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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The growth of GaN on the metallic compound graphite substrate by HVPE

HVPE 방법에 의한 금속 화합물 탄소체 기판 위의 GaN 성장

  • Kim, Ji Young (Department of Applied Sciences, Korea Maritime University) ;
  • Lee, Gang Seok (Department of Applied Sciences, Korea Maritime University) ;
  • Park, Min Ah (Department of Applied Sciences, Korea Maritime University) ;
  • Shin, Min Jeong (Department of Applied Sciences, Korea Maritime University) ;
  • Yi, Sam Nyung (Department of Applied Sciences, Korea Maritime University) ;
  • Yang, Min (Department of Applied Sciences, Korea Maritime University) ;
  • Ahn, Hyung Soo (Department of Applied Sciences, Korea Maritime University) ;
  • Yu, Young Moon (LED-MCT R&BD Center at Pukyong National University) ;
  • Kim, Suck-Whan (Department of Physics, Andong National University) ;
  • Lee, Hyo Suk (L&L.Co., Ltd.) ;
  • Kang, Hee Shin (CSsol.Co., Ltd.) ;
  • Jeon, Hun Soo (Department of Electrical Engineering and Computer Sciences, Nagoya University) ;
  • Sawaki, Nobuhiko (Department of Electrical and Electronics Engineering, AIT)
  • Received : 2013.08.29
  • Accepted : 2013.09.27
  • Published : 2013.10.31
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Abstract

The GaN layer was typical III-V nitride semiconductor and was grown on the sapphire substrate which cheap and convenient. However, sapphire substrate is non-conductivity, low thermal conductivity and has large lattice mismatch with the GaN layer. In this paper, the poly GaN epilayer was grown by HVPE on the metallic compound graphite substrate with good heat dissipation, high thermal and electrical conductivity. We tried to observe the growth mechanism of the GaN epilayer grown on the amorphous metallic compound graphite substrate. The HCl and $NH_3$ gas were flowed to grow the GaN epilayer. The temperature of source zone and growth zone in the HVPE system was set at $850^{\circ}C$ and $1090^{\circ}C$, respectively. The GaN epilayer grown on the metallic compound graphite substrate was observed by SEM, EDS, XRD measurement.

GaN는 대표적인 III-V족 질화물반도체로 주로 값싸고 다루기 쉬운 사파이어 기판 위에 성장된다. 하지만 사파이어 기판은 부도체이며, GaN과의 격자부정합을 일으키고 열전도도 또한 낮은 기판으로 알려져 있다. 본 논문에서는 방열기능과 열 전기전도도가 뛰어난 금속 화합물 탄소체 기판 위에 poly GaN epilayer를 HVPE법으로 성장시켜보았다. 비정질의 금속 화합물 탄소체 기판위에 성장되는 GaN epilayer의 성장메카니즘을 관찰하였다. GaN epilayer의 성장을 위해 HCl과 $NH_3$를 흘려주었다. 성장하기 위해 source zone과 growth zone의 온도는 각각 $850^{\circ}C$와 $1090^{\circ}C$로 설정했다. 성장이 끝난 샘플은 SEM, EDS, XRD측정을 통해 분석하였다.

Keywords

References

  1. V. Adivarahan, J. Zhang, A. Chitnis, W. Shuai, J. Sun, R. Pachipulusu, M. Shatalov and M. A. Khan, "Submilliwatt power III-N light emitting diodes at 285 nm", Jpn. J. Appl. Phys. 41 (2002) 435. https://doi.org/10.1143/JJAP.41.L435
  2. T.G. Zhu, U. Chowdhury, J.C. Denyszyn, M.M. Wong and R.D. Dupuis, "AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition", J. Cryst. Growth 248 (2003) 548. https://doi.org/10.1016/S0022-0248(02)01930-9
  3. T. Nishida, H. Saito and N. Kobayashi, "Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN", Appl. Phys. Lett. 79 (2001) 711. https://doi.org/10.1063/1.1390485
  4. H.M. Kim, J.S. Choi. J.E. Oh and T.K. Yoo, "Cathodoluminescence characterization of GaN thick films grown by using the HVPE method", J. Korean Phys. Soc. 37 (2000) 956. https://doi.org/10.3938/jkps.37.956
  5. Y.J. Yu, M.Y. Ryu, P.W. Yu, D.J. Kim and S.J. Park, "Optical investigation of InGaN/GaN quantum well structures with various barrier widths", J. Korean Phys. 28 (2001) 134.
  6. B. Luo, J. Kim, R. Mehandru, F. Ren, K.P. Lee, S.J. Pearton, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova, A.V. Osinsky and P.E. Norris, "Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions", Solid-State Electron 46 (2002) 1345. https://doi.org/10.1016/S0038-1101(02)00066-7
  7. F. Yun, M.A. Reshchikov, K. Jones, P. Visconti, H. Morkoç, S.S. Park and K.Y. Lee, "Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy", Solid- State Electron 44 (2000) 2225. https://doi.org/10.1016/S0038-1101(00)00202-1
  8. T. Ueda, M. Ishida and M. Yuri, "Laser lift-off of very thin AlGaN film from sapphire using selective decomposition of GaN interlayer", Appl. Surf. Sci. 216 (2003) 512. https://doi.org/10.1016/S0169-4332(03)00476-8
  9. A. Koukitu, F. Satoh, T. Yamane, H. Murakami and Y. Kumagai, "HVPE growth of $Al_xGa_{1-x}N$ ternary alloy using $AlCl_3$ and GaCl", J. Cryst. Growth 305 (2007) 335. https://doi.org/10.1016/j.jcrysgro.2007.04.006
  10. S.N. Lee, H.S. Paek, J.K. Son, T. Sakong, E. Yoon, O.H. Nam and Y. Park, "Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate", Physica B 376-377 (2006) 532. https://doi.org/10.1016/j.physb.2005.12.135
  11. K. Kawasaki, C. Koike, Y. Aoyagi and M. Takeuchi, "Vertical AlGaN deep ultraviolet light emitting diode emitting at 322 nm fabricated by the laser lift-off technique", Appl. Phys. Lett. 89 (2006) 261114. https://doi.org/10.1063/1.2424668
  12. J.K. Kang and Y.J. Kim, "Fabrication and characterization of tilted R-plane sapphire wafer for nonpolar aplane GaN", J. Korean Cryst. Growth & Cryst. Tech. 21(5) (2011) 187. https://doi.org/10.6111/JKCGCT.2011.21.5.187
  13. D.K. Oh, B.G. Choi, S.H. Kang, S.Y. Kim, S.A. Kim, S.K. Lee, J.H. Chung, K.H. Kim and K.B. Shim, "Surface morphology variation during wet etching of GaN epilayer grown by HVPE", J. Korean Cryst. Growth & Cryst. Tech. 22(6) (2012) 261. https://doi.org/10.6111/JKCGCT.2012.22.6.261
  14. H.H. Wu, K.H. Lin and S.T. Lin, "A study on the heat dissipation of high power multi-chip COB LEDs", Microelectr. J. 43 (2012) 280. https://doi.org/10.1016/j.mejo.2012.01.007
  15. H.H. Cheng, D.S. Huang and M.T. Lin, "Heat dissipation design and analysis of high power LED array using the finite element method", Microelectron. Reliab. 52 (2012) 905. https://doi.org/10.1016/j.microrel.2011.05.009

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