JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Gate All Around Metal Oxide Field Transistor: Surface Potential Calculation Method including Doping and Interface Trap Charge and the Effect of Interface Trap Charge on Subthreshold Slope

  • Najam, Faraz (School of Electrical Engineering, Korea University) ;
  • Kim, Sangsig (School of Electrical Engineering, Korea University) ;
  • Yu, Yun Seop (Department of Electrical, Electronic and Control Engineering and IITC, Hankyong National University)
  • Received : 2013.04.15
  • Accepted : 2013.07.10
  • Published : 2013.10.31
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Abstract

An explicit surface potential calculation method of gate-all-around MOSFET (GAAMOSFET) devices which takes into account both interface trap charge and varying doping levels is presented. The results of the method are extensively verified by numerical simulation. Results from the model are used to find qualitative and quantitative effect of interface trap charge on subthreshold slope (SS) of GAAMOSFET devices. Further, design constraints of GAAMOSFET devices with emphasis on the effect of interface trap charge on device SS performance are investigated.

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