전기전자학회논문지 (Journal of IKEEE)

  • 제17권3호
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  • Pages.365-370
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  • 2013
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  • 1226-7244(pISSN)
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  • 2288-243X(eISSN)
한국전기전자학회 (Institute of Korean Electrical and Electronics Engineers)
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A Study on Electrical Characteristics and Optimization of Trench Power MOSFET for Industrial Motor Drive

  • Kang, Ey Goo (Dept. of Photovoltaic Engineering, Far East University)
  • 투고 : 2013.08.16
  • 심사 : 2013.09.16
  • 발행 : 2013.09.30
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초록

Power MOSFET is developed in power savings, high efficiency, small size, high reliability, fast switching, and low noise. Power MOSFET can be used in high-speed switching transistors devices. Recently attention given to the motor and the application of various technologies. Power MOSFET is a voltage-driven approach switching device and designed to handle on large power, power supplies, converters, motor controllers. In this paper, the 400 V Planar type, and the trench type for realization of low on-resistance are designed. Trench Gate Power MOSFET Vth : 3.25 V BV : 484 V Ron : 0.0395 Ohm has been optimized.

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참고문헌

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