한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제26권8호
  • /
  • Pages.582-586
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  • 2013
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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아날로그 응용을 위한 DWFG MOSFET의 매크로 모델 및 연산증폭기 설계

Macro Model of DWFG MOSFET for Analog Application and Design of Operational Amplifier

  • 하지훈 (충북대학교 반도체공학과) ;
  • 백기주 (충북대학교 반도체공학과) ;
  • 이대환 (충북대학교 반도체공학과) ;
  • 나기열 (충북도립대학 반도체전자전공) ;
  • 김영석 (충북대학교 반도체공학과)
  • Ha, Ji-Hoon (Department of Semiconductor Engineering, Chungbuk National University) ;
  • Baek, Ki-Ju (Department of Semiconductor Engineering, Chungbuk National University) ;
  • Lee, Dae-Hwan (Department of Semiconductor Engineering, Chungbuk National University) ;
  • Na, Kee-Yeol (Department of Semiconductor Electronics, Chungbuk Provincial College) ;
  • Kim, Yeong-Seuk (Department of Semiconductor Engineering, Chungbuk National University)
  • 투고 : 2013.07.11
  • 심사 : 2013.07.17
  • 발행 : 2013.08.01
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초록

In this paper, a simple macro model of n-channel MOSFET with dual workfunction gate (DWFG) structure is proposed. The DWFG MOSFET has higher transconductance and lower drain conductance than conventional MOSFET. Thus analog circuit design using the DWFG MOSFET can improve circuit characteristics. Currently, device models of the DWFG MOSFET are insufficient, so simple series connected two MOSFET model is proposed. In addition, a two stage operational amplifier using the proposed DWFG MOSFET macro model is designed to verify the model.

키워드

참고문헌

  1. R. J. Baker, CMOS Circuit Design, Layout, and Simulation, 3rd ed. (John Wiley & Sons, New Jersey, 2010) p. 287.
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