The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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Ionizing Radiation Sensitivity Analysis of the Structural Characteristic for the MOS Capacitors

MOS 커패시터의 구조별 전리방사선 감도 특성 분석

  • Hwang, Young-Gwan (Dept, of Information Communication Engineering, Chungnam National University) ;
  • Lee, Seung-Min (Dept, of Electric, Electronics & Communication Engineering Education, Chungnam National University)
  • 황영관 (충남대학교 대학원 정보통신공학과) ;
  • 이승민 (충남대학교 사범대학 전기전자통신공학교육과)
  • Received : 2013.02.25
  • Accepted : 2013.06.26
  • Published : 2013.07.01
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Abstract

Ionizing Radiation effects on MOS devices provide useful information regarding the behavior of MOS based devices and circuits in the electronic instrumentation parts and instructive data for making the high sensitive sensors. The study presents the results of the analysis on the structural characteristics of MOS capacitor for sensing the ionizing radiation effect. We performed numerical modeling of Ionizing-radiation effect on MOS capacitor and simulation using Matlab program. Also we produced MOS capacitors and obtained useful data through radiation experiment to analyse the characteristic of ionizing radiation effect on MOS capacitor. Increasing the thickness of MOS capacitor's oxide layer enhanced the sensitivity of MOS capacitor under irradiation condition, but the sensitivity of irradiated MOS capacitor is uninfluenced by the area of MOS capacitor. The high frequency capacitance of the MOS capacitor is found to be strongly affected by incident ionizing radiation.

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References

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