Journal of the Korean Society of Manufacturing Process Engineers (한국기계가공학회지)

The Korean Society of Manufacturing Process Engineers (한국기계가공학회)
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Characteristic of Nitrogen doped Diamond-Like Carbon film on the Silicon substrates

실리콘 기판에 증착된 질소도핑 DLC 박막의 특성

  • Nguyen, Van Cao (Department of Nano Fusion Technology, Pusan National University) ;
  • Kim, Tae Hyeon (Department of Nano Fusion Technology, Pusan National University) ;
  • Kim, Hye Sung (Department of Nanomaterial Engineering, Pusan National University) ;
  • Shin, Dong Chul ;
  • Kim, Tae Gyu (Department of Nanomechatronics Engineering, Pusan National University)
  • Published : 2013.04.30
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Abstract

Various depositional conditions, such as substrate, pressure, deposition time, temperature of substrate, power and gas composition, have mainly been studied to attain DLC films using RF sputtering system up to the current. In this study, the $N_2/Ar/CH_4$ gas mixture factored on characteristics of DLC deposited film such as structure, hardness, electrical property were investigated. The concentration of the $N_2$ gas in the sputtering gas may be a significant effect on the growth rate of the doped films, because nitrogen ions react not only with the carbon atoms on the target but also with $C_xH_y$ ions in the plasma on the substrate surface. It was seen from this experimental that the resistance of deposited film is decreased, and the relative intensity ratio of D to G peak is increased as nitrogen content of film deposition is increased.

Keywords

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