Abstract
A novel balanced distributed amplifier (DA) was proposed using novel impedance transforming MEMS baluns. The impedance transforming MEMS balun is matched to $50{\Omega}$ at one input port and $25{\Omega}$ at two output ports. It is based on the electric field mode-change method, thus it is strongly independent of frequency and very compact. The novel balanced DA consists of two $25{\Omega}$-matched DAs and these are combined by $50{\Omega}$-to-$25{\Omega}$ baluns. Theoretically, it has two times wider bandwidth and power capability than the conventional DA. So as to verify the proposed concept, we designed and fabricated a conventional DA and the proposed one using 0.15-${\mu}m$ GaAs pHEMT technology.