반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

$Al_2O_3/SiN_x$ 후면 적층 패시베이션을 이용한 결정질 실리콘 태양전지의 효율 향상 연구

Efficiency Improvement with $Al_2O_3/SiN_x$ Rear Passivation of p-type Mono-crystalline Silicon Solar Cells

  • 천주용 (울산대학교 첨단소재공학부) ;
  • 백신혜 (KCC 중앙연구소) ;
  • 김인섭 (울산대학교 첨단소재공학부) ;
  • 천희곤 (울산대학교 첨단소재공학부)
  • Cheon, Joo Yong (School of Materials Sci. & Engr., University of Ulsan) ;
  • Beak, Sin Hey (KCC Central Research Institute) ;
  • Kim, In Seob (School of Materials Sci. & Engr., University of Ulsan) ;
  • Chun, Hui Gon (School of Materials Sci. & Engr., University of Ulsan)
  • 투고 : 2013.08.30
  • 심사 : 2013.09.23
  • 발행 : 2013.09.30
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초록

Current research trends of solar cells has focused on the high conversion efficiency and low-cost production technology. Passivation technology that can be easily adapted to mass production. Therefore, this study conducted experiments with aim of the following two methods for the fabrication of high-efficiency crystalline silicon solar cells. In the first task, an attempt is formation of local Al-BSF to a number of locally doped dots to increase the conversion efficiency of solar cells to reduce the loss of $V_{oc}$ overcome. The second major task, rear surface apply in $Al_2O_3/SiN_x$ stack layer, $Al_2O_3$ prominent negative fixed charge characteristics. As the result of task, Local Al-BSF and $Al_2O_3/SiN_x$ stack layer applied to the p-type single crystalline silicon solar cells, the average $V_{oc}$ of 644mV, $I_{sc}$ of 918mV and conversion efficiency of 18.70% were obtained.

키워드

참고문헌

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