Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Optimization of Ohmic Contact Metallization Process for AlGaN/GaN High Electron Mobility Transistor

  • Wang, Cong (Department of Electrical Engineering, Kwangwoon University) ;
  • Cho, Sung-Jin (Department of Electrical Engineering, Kwangwoon University) ;
  • Kim, Nam-Young (Department of Electrical Engineering, Kwangwoon University)
  • Received : 2012.05.18
  • Accepted : 2012.12.14
  • Published : 2013.02.25
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Abstract

In this paper, a manufacturing process was developed for fabricating high-quality AlGaN/GaN high electron mobility transistors (HEMTs) on silicon carbide (SiC) substrates. Various conditions and processing methods regarding the ohmic contact and pre-metal-deposition $BCl_3$ etching processes were evaluated in terms of the device performance. In order to obtain a good ohmic contact performance, we tested a Ti/Al/Ta/Au ohmic contact metallization scheme under different rapid thermal annealing (RTA) temperature and time. A $BCl_3$-based reactive-ion etching (RIE) method was performed before the ohmic metallization, since this approach was shown to produce a better ohmic contact compared to the as-fabricated HEMTs. A HEMT with a 0.5 ${\mu}m$ gate length was fabricated using this novel manufacturing process, which exhibits a maximum drain current density of 720 mA/mm and a peak transconductance of 235 mS/mm. The X-band output power density was 6.4 W/mm with a 53% power added efficiency (PAE).

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