Journal of the Korea Institute of Information and Communication Engineering (한국정보통신학회논문지)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
권호 표지
DOI QR코드

DOI QR Code

A study on CIGS thin film characteristic with composition ratio change

조성비 변화에 의한 CIGS박막 특성에 관한 연구

  • Received : 2012.08.02
  • Accepted : 2012.09.27
  • Published : 2012.10.31
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, we produced CIGS thin film by co-evaporation method. During the process, substrate temperature and Ga/(In+Ga) composition ratio was altered to observe the change of resistivity and absorbance spectra measurements. As substrate temperature increased, resistivity decreased and as Ga/(In+Ga) composition ratio increased from 0.30 to 0.72, band gap also increased with the range of 1.26eV, 1.30eV, 1.43eV, 1.47eV. With the constant condition of composition ratio, resistivity decreased with increased thickness of the thin film. On this experiment, we assumed that optical absorbance ratio and optical current will be increased with CIGS thin film fabrication.

본 논문은 동시진공증발법(co-evaporation method)으로 CIGS 박막(thin film)을 제작을 하였다. 제작과정 중 기판온도(substrate temperature)변화와 Ga/(In+Ga) 조성비(composition ratio) 변화에 따른 저항율(resistivity) 및 흡수스펙트럼(absorbance spectra)을 측정하였다. 기판온도가 상승하면 저항율이 감소하였으며, Ga/(In+Ga) 조성비가 0.30에서 0.72까지 증가됨에 따라 밴드갭(band gap)이 1.26eV, 1.30eV, 1.43eV,1.47eV로 증가됨을 알 수 가 있었다. 동일한 조건에서 조성비를 증가하므로써 두께가 증가되었으며 저항율은 감소하였다. 본 실험을 통하여 CIGS 박막을 제작하면 광흡수률(optical absorbance ratio) 및 광전류(optical current)가 증가 될 것으로 예측할 수가 있다.

Keywords

References

  1. 박정철, 추순남, "기판온도에 따른 $CuInSe_{2}$ 박막의 특성" 한국전기전자재료학회, 23호, 11권, p911, 2010
  2. H.Monig, R.Caballero, C.A.Kaufmann, T.L.Schmidt, M.Ch. Lux-Steiner, S.Sadewasser, "Nanoscale inve -stigtions of the electronic surface properties of Cu(In,Ga) $Se_{2}$ thihn film by scanning tunneling spectroscopy", Solar Energy Materials & Solarells, Vol.95, p.1537-543 2011 https://doi.org/10.1016/j.solmat.2010.11.027
  3. L.Gutay,C.Lienau,G.H.Bauer, "Subgrain size inhomogeneities in the luminesence spectra of thin film chalcopyrites", Appl.Phys. ett. p.97, 2010
  4. D.A.Ras, M.A.Contrersa, R.Noufi, H.W .Schock, "Impact of the Se evaporation rate in the microstructure and texture of Cu(In, Ge)$Se_{2}$ thin films for solar cells", Thin Solid Films. Vol.517, pp.2218- 2221, 2009 https://doi.org/10.1016/j.tsf.2008.10.133
  5. M.Chandramohan, "Experimental and theoretical investigations of structural and optical properties of CIGS thin films", Materials Science and Engineering, in press, 2010
  6. A. S. Kindyak, V. V. Kindyak,Y. V.ud, "The valence band strucure in chalcopyrite Cu(In, Ga)$Se_{2}$ films", semiconducores, Vol 30, No 9, pp.882-885, 1997
  7. J.F.Guillemoles, L.Kronik,D.Cahen, U.Rau, A. Jasenek, H.W.Schock, "Stability Issues of Cu(In,Ga)$Se_{2}$-Based Sola Cells",J.Phys.Chem.B Vol.104, pp.4849-4864, 2000 https://doi.org/10.1021/jp993143k
  8. P.Guha, S.N.Kundu, S.Chaudhuri, and A.K.Pal, "Elelctron transport processes in CuIn1-xGax$Se_{2}$ films prepared by four source co-evaporation techmique", Materials Chemistry and Physics, Vol.74, pp.192-200, 2002 https://doi.org/10.1016/S0254-0584(01)00462-X
  9. K.Ramanathan, G. Teeter, J.C.Keane, R.Noufi, "Properties of high-efficiency CuInGa$Se_{2}$ thin film solar cells", Thin Solid FilmsVol 480, No481, pp.499-502, 2005 https://doi.org/10.1016/j.tsf.2004.11.050
  10. Wallin, T.Jarmar, U.Malm, M.Edoff, L.Stolt. "Influence of the average Se-to-metal overpressure during co-evaporation of $Cu(InxGa1-x)Se_{2}$", Thin Solid Films, Ariticel in Press, 4, 2011
  11. G.Hanna, T.Glatzel, S.Sadewasser, N.Ott. H.P.Strunk, U.Rau,J.H.Werner,"Texture and electronic activity of grain boundaries in Cu(In,Ga)$Se_{2}$ thin films" Appl. Phys.A 82, p.1-7,2006 https://doi.org/10.1007/s00339-005-3411-1
  12. O. Lundberg, M. Edoff, L. Stolt "The effect of Ga-grading in CIGS thin film solar cell" Thin Solid Film 480-481, p.520-525, 2005 https://doi.org/10.1016/j.tsf.2004.11.080
  13. Georg Voorwinden*, Rovert kniese, Michael Powalla" In-line Cu(In,Ga)$Se_{2}$ co-evaporation processes with graded band gaps on large substrates", Thin Solid Films 431-432, 538-542, 2003 https://doi.org/10.1016/S0040-6090(03)00258-X