Applied Microscopy

Korean Society of Microscopy (한국현미경학회)
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Precise Comparison of Two-dimensional Dopant Profiles Measured by Low-voltage Scanning Electron Microscopy and Electron Holography Techniques

  • Received : 2012.09.02
  • Accepted : 2012.09.10
  • Published : 2012.09.30
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Abstract

Detailed comparison of low-voltage scanning electron microscopy and electron holography techniques for two-dimensional (2D) dopant profiling was carried out with using the same multilayered p-n junction specimen. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various microscopic techniques.

Keywords

References

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