한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제25권9호
  • /
  • Pages.681-685
  • /
  • 2012
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

BCl3/He 유도결합 플라즈마를 이용한 TiN 박막의 식각 특성

Dry Etching Characteristics of TiN Thin Films in BCl3/He Inductively Coupled Plasma

  • 주영희 (중앙대학교 전자전기공학부) ;
  • 우종창 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Joo, Young-Hee (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
  • 투고 : 2012.07.10
  • 심사 : 2012.08.23
  • 발행 : 2012.09.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

We investigated the dry etching characteristics of TiN in $TiN/Al_2O_3$ gate stack using a inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching parameters are the gas mixing ratio, the RF power, the DC-bias voltages and process pressures. The highest etch rate is in $BCl_3/He$ (25%:75%) plasma. The selectivity of TiN thin film to $Al_2O_3$ is pretty similar with $BCl_3/He$ plasma. The chemical reactions of the etched TiN thin films are investigated by X-ray photoelectron spectroscopy. The intensities of the Ti 2p and the N 1s peaks are modified by $BCl_3$ plasma. Intensity and binding energy of Ti and N could be changed due to a chemical reaction on the surface of TiN thin films. Also we investigated that the non-volatile byproducts such as $TiCl_x$ formed by chemical reaction with Cl radicals on the surface of TiN thin films.

키워드

참고문헌

  1. A. L. Gouil, O. Joubert, G. Cunge, T. Chevolleau, L. Vallier, B. Chenevier, and I. Matko, J. Vac. Sci. Techno., B35, 767 (2007).
  2. G. K. Cellar and S. Cristoloveanu, Appl. Phys. Lett., 93, 4955 (2003).
  3. H. Shimada and K. Maruyama, Jpn. J. Appl. Phys., 43, 1768 (2004). https://doi.org/10.1143/JJAP.43.1768
  4. C. B. Labella, H. L. Maynard, and J. T. C. Lee, J. Vac. Sci. Technol., B14, 2574 (1996).
  5. J. F. Shackelford, Materials Science for Engineers, (MacMillan, New York, 1988) p.508
  6. H. Miyazaki, K. Hinode, Y. Homma, and K. Mukai, Jpn. Soc. Appl. Phys., 329 (1987).
  7. J. C. Woo, Y. H. Joo, J. S. Park, and C. I. Kim, Trans. Electr. Electron. Mater., 12, 144 (2011). https://doi.org/10.4313/TEEM.2011.12.4.144
  8. M. Darnon, T. Chevolleau, D. Eon, L. Vallier, J. Torres, and O. Joubert, J. Vac. Sci. Technol., B24, 2262 (2006).
  9. W. S. Hwang, J. H. Chen, W. J. Yoo, and V. Bliznetsov, J. Vac. Sci. Technol., A23, 964 (2005).
  10. E. Sungauer, E. Pargon, and T. Lill, J. Vac. Sci. Technol., B25, 1640 (2007).