DOI QR코드

DOI QR Code

CHARACTERISTICS OF FABRICATED SiC RADIATION DETECTORS FOR FAST NEUTRON DETECTION

  • 투고 : 2012.04.30
  • 심사 : 2012.06.18
  • 발행 : 2012.06.30

초록

Silicon carbide (SiC) is a promising material for neutron detection at harsh environments because of its capability to withstand strong radiation fields and high temperatures. Two PIN-type SiC semiconductor neutron detectors, which can be used for nuclear power plant (NPP) applications, such as in-core reactor neutron flux monitoring and measurement, were designed and fabricated. As a preliminary test, MCNPX simulations were performed to estimate reaction probabilities with respect to neutron energies. In the experiment, I-V curves were measured to confirm the diode characteristic of the detectors, and pulse height spectra were measured for neutron responses by using a $^{252}Cf$ neutron source at KRISS (Korea Research Institute of Standards and Science), and a Tandem accelerator at KIGAM (Korea Institute of Geoscience and Mineral Resources). The neutron counts of the detector were linearly increased as the incident neutron flux got larger.

키워드

참고문헌

  1. Ruddy FH, Dulloo AR, Seidel JG, F. W. Hantz, Grobmyer LR. Nuclear reactor power monitoring using silicon carbide semiconductor radiation detectors. Nulcear Technology. 2002;140(2):198-208.
  2. Ruddy FH, Dulloo AR, Seidel JG, Palmour JW, Singh R. The charged particle response of silicon carbide semiconductor radiation detector. Nucl. Instrum. Methods Phys. Res., Sect. A. 2003; 505:159-162. https://doi.org/10.1016/S0168-9002(03)01041-6
  3. Flammang RW, Seidel JG, Ruddy FH. Fast neutron detection with silicon carbide semiconductor radiation detectors. Nucl. Instrum. Methods Phys. Res., Sect. A. 2007;579:177-179. https://doi.org/10.1016/j.nima.2007.04.034
  4. Manfredotti C, Giudice AL, Fasolo F, Vittone E, Paolini C, Fizzotti F, Zanini A, Wagner G, Lanzieri C. Silicon carbide detectors for neutron monitoring. Nucl. Instrum. Methods Phys. Res., Sect. A. 2005;552:131-137. https://doi.org/10.1016/j.nima.2005.06.018
  5. Ruddy FH, Dulloo AR, Member, IEEE, Seidel JG, Das MK, Ryu SH, Agarwal AK. The fast neutron response of 4H silicon carbide semiconductor radiation detectors. IEEE T. Nucl. Sci. 2006;53(3):1666-1670. https://doi.org/10.1109/TNS.2006.875151
  6. Benmaza H, Akkal B, Abid H, Bluer JM, Anani M, Bensaad Z. Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode. Microelectron. J. 2008;39:80-84. https://doi.org/10.1016/j.mejo.2007.10.018
  7. L.S. Waters (Ed.). MCNPXTM User's Manual. New Mexico; Los Alamos National Laboratory. 2002.