Journal of Electrical Engineering and Technology

The Korean Institute of Electrical Engineers (대한전기학회)
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Highly transparent and resistive nanocrystalline ZnO-SnO2 films prepared by rf magnetron sputtering

  • Cha, Chun-Nam (Division of Industrial System Engineering and ERI, Gyeongsang National University) ;
  • Choi, Mu-Hee (Dept. of Electrical Engineering, and ERI, Gyeongsang National University) ;
  • Ma, Tae-Young (Dept. of Electrical Engineering, and ERI, Gyeongsang National University)
  • Received : 2011.05.22
  • Accepted : 2012.02.17
  • Published : 2012.07.01
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Abstract

ZnO-$SnO_2$ films were deposited by rf magnetron sputtering using a ZnO-$SnO_2$ (2:1 molar ratio) target. The target was made from a mixture of ZnO and $SnO_2$ powders calcined at $800^{\circ}C$. The working pressure was 1 mTorr, and the rf power was 120 W. The ratio of oxygen to argon ($O_2$:Ar) was varied from 0% to 10%, and the substrate temperature was varied from $27^{\circ}C$ to $300^{\circ}C$. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force spectroscopy (AFM). The ZnO-$SnO_2$ films deposited in $O_2$:Ar = 10% exhibited resistivity higher than $10^6{\Omega}cm$ and transmittance of more than 80% in the visible range.

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References

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