Transactions on Electrical and Electronic Materials

  • 제13권3호
  • /
  • Pages.157-161
  • /
  • 2012
  • /
  • 1229-7607(pISSN)
  • /
  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

Dry Etching of ITO Thin Films by the Addition of Gases in Cl2/BCl3 Inductivity Coupled Plasma

  • Joo, Young-Hee (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Choi, Kyung-Rok (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Han-Soo (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Wi, Jae-Hyung (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
  • 투고 : 2012.02.24
  • 심사 : 2012.05.17
  • 발행 : 2012.06.25
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

In this study, we investigated the etching characteristics of ITO thin films and the effects of inert gases added to $Cl_2/BCl_3$ inductivity coupled plasma. The maximum etch rate of ITO thin film was 130.0 nm/min upon the addition of Ar (6 sccm) to the $Cl_2/BCl_3$ (4:16 sccm) plasma, which was higher than that with He or $N_2$ added to the plasma. The ion bombardment by $Ar^+$ sputtering was due to the relatively low volatility of the by-products formed in the $Cl_2/BCl_3$ (4:16 sccm) plasma. The surface of the etched ITO thin film was characterized by x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). From the XPS results, it is concluded that the proper addition of Ar and He to the $Cl_2/BCl_3$ plasma removes carbon and by-products from the surface of the etched ITO thin film.

키워드

참고문헌

  1. T. H. Chou, K. Y. Cheng, T. L. Chang, C. J. Ting, H. C. Hsu, C. J. Wu, J. H. Tsai, T. Y. Huang, Microelec. Eng. 86, 628 (2009) [DOI:j.mee.2009.01.067]. https://doi.org/10.1016/j.mee.2009.01.067
  2. C. S. Lee, Z. Y. Cui, H. F. Jin, S. W. Sung, H. G. Lee, N. S. Kim, Trans. Electr. Electron. Mater. 12, 35 (2011) [DOI:10.4313/TEEM.2001.12.1.35].
  3. M. Burgelman, A. Niemegeers, Solar Energy Materials & Solar Cells 51, 129 (1998) [DOI:10.1016/S0927-0248(97)00227-4].
  4. J. H. Kim, J. H. Her, Y. J. Lim, P. Kumar, S. H. Lee, K. H. Park, J. H. Lee, B. K. Kim, Trans. Electr. Electron. Mater. 11, 134 (2010) [DOI:10.4313/TEEM.2010.11.3.134].
  5. Y. Kuo, Jpn. J. Appl. Phys. 36, L629 (1997) [DOI:10.1143/JJAP.36.L629].
  6. A. Grigonis, R. Knizikevicius, Z. Rutkuniene, D. Tribandis, Vacuum 70, 319 (2003) [DOI:10.1016/S0042-207X(02)00662-0].
  7. H. B. Andagana, X. A. Cao, J. Vac. Sci. Technol. A 28, 189 (2010) [DOI:10.1116/1.3280919].
  8. J. C. Woo, D. S. Um, C. I. Kim, Thin Solid Films 518, 2905 (2010) [DOI:10.1016/j.tsf.2009.10.144].
  9. A. M. Efremov, V. I. Svettsov, D. V. Sitanov, D. I. Balashow, Thin Solid Films 516, 3020 (2008) [DOI:10.1016/j.tsf.2007.11.046].
  10. G. H. Kim, C. I. Kim, A. M. Efremov, Vacuum 79, 231 (2005) [DOI:10.1016/j.vacuum.2005.03.012].
  11. Y. H. Park, J. K. Kim, J. H. Lee, Y. W. Joo, H. S. Noh, S. J. Pearton, Microelec. Eng. 87, 548 (2010) [DOI:10.1016/j.mee.2009.08.006]
  12. J. S. Kim, F. Cacialli, R. Friend, Thin Solid Films 445, 358 (2003) [DOI:10.1016/S0040-6090(03)01185-4].
  13. H. Y. Yu, X. D. Feng, D. Grozea, Z. H. Lu, R. N. S. Sodhi, A. M. Hor, H. Aziz, Appl. Phys. Lett. 78, 2595 (2001) [DOI:10.1063/1.1367897].
  14. W. R. Salaneck, N. Johansson, K. Z. Xing, F. Cacialli, R. H. Friend, G. Beamson, D. T. Clark, Synth. Met. 92, 207 (1998) [DOI:10.1016/S0379-6779(98)80088-X].
  15. W. Song, S. K. So, L. Cao, Appl. Phys. A: Mater. Sci. Process. 72, 361 (2001) [DOI:10.1007/s003390000534].
  16. D. Y. Kim, J. H. Ko, M. S. Park, N. E. Lee, Thin Solid Films 516, 3512 (2008) [DOI:10.1016/j.tsf.2007.08.021].

피인용 문헌

  1. Reactive ion etching of indium-tin oxide films by CCl4-based Inductivity Coupled Plasma vol.741, 2016, https://doi.org/10.1088/1742-6596/741/1/012105
  2. Nearly Total Solar Absorption in Ultrathin Nanostructured Iron Oxide for Efficient Photoelectrochemical Water Splitting vol.1, pp.3, 2014, https://doi.org/10.1021/ph4001026
  3. Surface-enhanced infrared absorption for the periodic array of indium tin oxide and gold microdiscs: Effect of in-plane light diffraction 2018, https://doi.org/10.1021/acsphotonics.7b01265