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Investigation of Structural and Optical Characteristics of In2Se3 Thin Films Fabricated by Thermal Annealing

열처리로 제조된 In2Se3 박막의 구조 및 광학적 특성 연구

  • Park, Jae-Hyoug (Photovoltaic and Optoelectronic Device Center, Korea Photonics Technology Institute) ;
  • Kim, Dae-Young (Photovoltaic and Optoelectronic Device Center, Korea Photonics Technology Institute) ;
  • Park, Gwang-Hun (Photovoltaic and Optoelectronic Device Center, Korea Photonics Technology Institute) ;
  • Han, Myung-Soo (Photovoltaic and Optoelectronic Device Center, Korea Photonics Technology Institute) ;
  • Kim, Hyo-Jin (Photovoltaic and Optoelectronic Device Center, Korea Photonics Technology Institute) ;
  • Shin, Jae-Cheol (Photovoltaic and Optoelectronic Device Center, Korea Photonics Technology Institute) ;
  • Ha, Jun-Seok (Department of Advenced Chemicals & Engineering, Chonnam University) ;
  • Kim, Kwang-Bok (Frontier Research Center, Kumho Electric) ;
  • Ko, Hang-Ju (Photovoltaic and Optoelectronic Device Center, Korea Photonics Technology Institute)
  • 박재형 (한국광기술원 광에너지연구센터) ;
  • 김대영 (한국광기술원 광에너지연구센터) ;
  • 박광훈 (한국광기술원 광에너지연구센터) ;
  • 한명수 (한국광기술원 광에너지연구센터) ;
  • 김효진 (한국광기술원 광에너지연구센터) ;
  • 신재철 (한국광기술원 광에너지연구센터) ;
  • 하준석 (전남대학교 신화학소재공학과) ;
  • 김광복 (금호전기프론티어연구센터) ;
  • 고항주 (한국광기술원 광에너지연구센터)
  • Received : 2012.02.09
  • Accepted : 2012.05.15
  • Published : 2012.05.31

Abstract

We report investigation of structural and optical characteristics of $In_2Se_3$ thin films fabricated by thermal annealing process. Indium (In) is deposited on substrates by sputtering methods and $In_2Se_3$ thin films are fabricated by thermal annealing it with selenium vapor. The annealing temperature was changed from $150^{\circ}C$ to $400^{\circ}C$. We observe formation and phase changes of $In_2Se_3$ thin films with increase of annealing temperature. Conglomeration of In is observed at low annealing temperature (${\leq}150^{\circ}C$). $In_2Se_3$ phases are started to form at $200^{\circ}C$ and ${\gamma}-In_2Se_3$ phase form at $350^{\circ}C$. High-quality ${\gamma}-In_2Se_3$ thin film with wurtzite structure is obtained at $400^{\circ}C$ of annealing temperature. Furthermore, we confirm that band gaps of $In_2Se_3$ thin films are increased according to increase of annealing temperature. Optical band gap of high-quality ${\gamma}-In_2Se_3$ is found to be 1.796eV.

열처리 공정으로 제조한 $In_2Se_3$ 박막의 구조 및 광학적 물성을 조사하여 보고한다. 기판위에 스퍼터링 방법으로 인듐(In: indium)을 증착하고 셀레늄 분위기에서 열처리 온도를 변화시키며 In-Se 박막을 제조하였다. 열처리 온도가 증가함에 따라 $In_2Se_3$ 박막의 형성과 상의 변화를 관찰 할 수 있었다. 낮은 열처리 온도(${\leq}150^{\circ}C$)에서는 In의 뭉침 현상을 관찰할 수 있었고 열처리 온도가 $250^{\circ}C$ 부터 $In_2Se_3$ 박막이 형성되며 $350^{\circ}C$ 에서 ${\gamma}-In_2Se_3$ 상이 형성됨을 알 수 있었다. 열처리 온도가 $400^{\circ}C$로 증가면 wurtzite 구조의 고품질 ${\gamma}-In_2Se_3$ 박막을 얻을 수 있었다. 열처리 온도가 증가함에 따라 $In_2Se_3$ 박막의 밴드갭이 증가함을 알 수 있었고, 열처리 온도 $400^{\circ}C$에서 제조된 ${\gamma}-In_2Se_3$ 결정질 박막의 밴드갭이 1.796eV임을 알았다.

Keywords

References

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