전기전자학회논문지 (Journal of IKEEE)

  • 제16권2호
  • /
  • Pages.127-130
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  • 2012
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  • 1226-7244(pISSN)
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  • 2288-243X(eISSN)
한국전기전자학회 (Institute of Korean Electrical and Electronics Engineers)
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Single Balanced Monolithic Diode Mixer using Marchand Balun for Millimeter-wave Applications

  • 투고 : 2012.05.22
  • 심사 : 2012.06.11
  • 발행 : 2012.06.30
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초록

In this paper, we reported on a single balanced monolithic diode mixer using Marchand balun for millimeter-wave applications. The single balanced monolithic mixer was fabricated using drain-source-connected pseudomorphic high electron mobility transistor (PHEMT) diodes considering the PHEMT MMIC full process. The average conversion loss is 16 dB in the RF frequency range of 81~86 GHz at LO frequency of 75 GHz with LO power of 10 dBm. The RF-to-LO isolation characteristics are greater than -30 dB and the total chip size is $1.0mm{\times}1.35mm$.

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참고문헌

  1. S. A. Maas, Microwave Mixers, 2nd ed. Norwood, MA:Artech House, 1993
  2. S. A. Maas, W. C. Kwo, "A broadband, planar, doubly balanced monolithic Ka-band diode mixer," IEEE Transactions on Microwave Theory and Techniques, vol. 41, no. 12, pp. 2330-2335, 1993 https://doi.org/10.1109/22.260725
  3. C. Florian, F. Scappaviva, M. Feudale, V. A. Monaco, F. Filicori, "A V band singly balanced diode mixer for space application," Gallium Arsenide and Other Semiconductor Application Symposium, pp. 441-444, 2005
  4. Z. Zhang, Y. R. Wei, K. Wu, "Broadband Millimeter-Wave Single Balanced Mixer and Its Applications to Substrate Integrated Wireless Systems," IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 3, pp. 660-669, 2012 https://doi.org/10.1109/TMTT.2011.2172808
  5. Y. I. Ryu, et al., "A Monolithic Broadband Doubly Balanced EHF HBT Star Mixer with Novel Microstrip Baluns," in Proc. IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium, pp. 155-158, 1995