Abstract
Probe tip, which should have not only superior electrical characteristics but also good abrasion resistance for numerous contacts with semiconductor pads to confirm their availability, is essential for MEMS probe card. To obtain good durability of probe tip, it needs thick and crack-free rhodium layer on the tip. However, when the rhodium thickness deposited by electroplating increased, unwanted cracks by high internal stress led to serious problem of MEMS probe tip. This article reported the method of thick Rh deposition with Au buffer layer on the probe tip to overcome the problem of high internal stress and studied mechanical and electrical properties of that. MEMS probe tip with double-Rh layer had good contact resistance and durability during long term touch downs.