한국결정성장학회지 (Journal of the Korean Crystal Growth and Crystal Technology)

  • 제22권2호
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  • Pages.65-72
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  • 2012
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  • 1225-1429(pISSN)
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  • 2234-5078(eISSN)
한국결정성장학회 (The Korea Association of Crystal Growth)
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알루미늄 기판 상의 Ni layer가 a-Si의 AIC(Aluminum Induced Crystallization)에 미치는 영향

Effects of Ni layer as a diffusion barrier on the aluminum-induced crystallization of the amorphous silicon on the aluminum substrate

  • 윤원태 (인천대학교 신소재공학과) ;
  • 김영관 (인천대학교 신소재공학과)
  • Yun, Won-Tae (Department of Advanced Materials Science and Engineering, University of Incheon) ;
  • Kim, Young-Kwan (Department of Advanced Materials Science and Engineering, University of Incheon)
  • 투고 : 2011.12.21
  • 심사 : 2012.02.03
  • 발행 : 2012.04.30
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초록

본 연구에서는 비정질 실리콘의 알루미늄 유도 결정화(AIC)가 시도되었다. 결정질 실리콘의 좀 더 큰 입자를 얻기 위해, 선택적인 핵생성(Selective nucleation) 시도는 비정질 실리콘 밑의 실리카($SiO_2$) 층의 습식 파우더 분사 처리와 함께 진행됐다. 또한 니켈 층은 실리콘 원자가 알루미늄 층으로 이동하는 것을 방지하기 위한 확산 방지막(Diffusion barrier)으로 선택되었다. $520^{\circ}C$에서 열처리를 한 후에 XRD 분석을 통해 Si(111) 방향으로 결정화된 결정질 실리콘을 확인했고 니켈은 실리콘과 알루미늄 사이의 확산 방지막으로 매우 효과적인 재료라는 것을 입증하였다. 이 연구는 고성능의 태양전지에 적용하는 결정질 실리콘 막의 좀 더 큰 입자를 얻기 위한 방법 중의 하나라고 기대된다.

Aluminum induced crystallization of amorphous silicon was attempted by the aluminum substrate. To avoid the layer exchange between silicon and aluminum layer, Ni layer was deposited between these two layers by sputtering. To obtain the bigger grain of the crystalline silicon, wet blasted silica layer was employed as windows between the nickel and a-Si layer. Ni obtained after the annealing treatment at $520^{\circ}C$ was found to be a promising material for the diffusion barrier between silicon and aluminum. One way to obtain bigger grain of crystalline silicon layer applicable to solar cell of higher performance was envisioned in this investigation.

키워드

참고문헌

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