Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Electrical and Optical Properties of Ga-doped ZnO Thin Films Deposited at Different Process Pressures by RF Magnetron Sputtering

RF 마그네트론 스퍼터링법으로 제작된 Ga-doped ZnO 박막의 공정압력에 따른 전기적, 광학적 특성

  • Jeong, Seong-Jin (Electronic Engineering of Cheongju University) ;
  • Kim, Deok-Kyu (Advanced Development Group, Samsung LED Co. Ltd.) ;
  • Kim, Hong-Bae (School of Electronic and Information Engineering, Cheongju University)
  • 정성진 (청주대학교 전자공학과) ;
  • 김덕규 (삼성LED 선행개발그룹) ;
  • 김홍배 (청주대학교 전자정보공학부)
  • Received : 2011.10.12
  • Accepted : 2012.01.16
  • Published : 2012.01.30
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Abstract

Ga-doped ZnO (GZO) thin films for application as transparent conducting oxide film were deposited on the glass substrate by using rf-magnetron sputtering system. The effects of working pressure on electrical and optical characteristics of GZO films were investigated. Regardless of the working pressure, all films were oriented along with the c-axis, perpendicular to the substrate. The electrical resistivity was about $8.68{\times}10^{-3}{\Omega}{\cdot}cm\sim2.18{\times}10^{-3}{\Omega}{\cdot}cm$ and the average transmittance of all films including substrates was over 90% in the visible range. The good transparents and conducting properties were obtained due to controle the working pressure. The obtained results have acceptable for application as transparent conductive electrodes in LCDs and solar cells.

투명전도산화막인 Ga-도핑된 ZnO (GZO) 박막을 RF 마그네트론 스퍼터링 증착법을 이용하여 증착하고 전기적, 광학적 특성을 연구하였다. 증착변수로 공정압력에 변수를 주었으며 공정 압력 변화에 따라 전기적 특성과 광학적 특성이 달라짐을 확인할 수 있었다. 모든 박막은 공정압력에 상관없이 c-축(002) 방향성을 나타냈다. 증착된 GZO 박막의 전기저항성은 $8.68{\times}10^{-3}{\Omega}{\cdot}cm\sim2.18{\times}10^{-3}{\Omega}{\cdot}cm$이었고, 모든 가시광 영역에서 90% 이상의 평균 투과율을 보였다. 공정압력에 따라 상온에서 증착된 GZO 박막은 우수한 낮은 저항성과 높은 투과율을 나타내었고, 평판디스플레이와 태양전지의 투명전극으로 응용되기에 적합한 특성을 지닌 것을 확인 할 수 있었다.

Keywords

References

  1. H. Kobayashi, T. Ishida, Y. Nakato, and H. Tsubomura, J. Appl. Phys. 69, 1736 (1991). https://doi.org/10.1063/1.347220
  2. S. Major, S. Kumar, M. Bhatnagar, and K. L. Chopra, Appl. Phys. Lett. 49, 394 (1986). https://doi.org/10.1063/1.97598
  3. H. L. Hartnagel, A. L. Dawar, A. K. Jain, and C. Jagadish. Semiconducting Transparent Thin Films (Institute of Physics Publishing, Bristol and Philadelphia, 1995).
  4. M. Hiramatsu, K. Imaeda, N. Horio, and T. Goto. J. Vac. Sci. Technol. A 16, 669 (1998). https://doi.org/10.1116/1.581085
  5. M. Chen, Z. L. Pei, C. Sun, J. Gong, R. F. Huang, and L. S. Wen. Mat. Sci. Eng. B 85, 212 (2001). https://doi.org/10.1016/S0921-5107(01)00584-0
  6. T. Miyazaki, K. Sato, A. Mitsui, and H. Nishimura. Jpn. J. Appl. Phys. 24, L781 (1985). https://doi.org/10.1143/JJAP.24.L781
  7. H. J. Ko, Y. F. Chen, S. K. Hong, H. Wenisch, T. Yao, D. C. Look, J. Hu, and R. G. Gordon, J. Appl. Phys. 72, 5381 (1992). https://doi.org/10.1063/1.351977
  8. J. Hu and R. G. Gordon. J. Appl. Phys. 72, 5381 (1992). https://doi.org/10.1063/1.351977
  9. K. Y. Cheong, N. Muti, and S. R. Ramanan. Thin Solid Films 410, 142-146 (2002). https://doi.org/10.1016/S0040-6090(02)00286-9
  10. K. T. Ramakrishna Reddy, H. Gopalaswamy, P. J. Reddy, and R. W. Miles. J. Crystal Growth 210, 516 (2000). https://doi.org/10.1016/S0022-0248(99)00868-4
  11. E. Fortunato, V. Assuncao, A. Goncalves, A. Marques, H. Aguas, L. Pereira, I. Ferreira, P. Vilarinho, and R. Martins. Thin Solid Films 451-452, 443-447 (2004). https://doi.org/10.1016/j.tsf.2003.10.139
  12. G. A. Hirata, J. McKittrick, T. Cheeks, J. M. Siqueiros, J. A. Diaz, O. Contreras, and O. A. Lopez Thin Solid Films 288, 29 (1996). https://doi.org/10.1016/S0040-6090(96)08862-1
  13. H. Kato, M. Sano, K. Miyamoto, and T. Yao. J. Crystal Growth. 237-239, 538 (2002). https://doi.org/10.1016/S0022-0248(01)01972-8
  14. J. H. Lee, D. J. Lee, D. G. Lim, and K. J. Yang. Thin Solid Films 515, 6094 (2007). https://doi.org/10.1016/j.tsf.2006.12.099
  15. A. Van der Drift. Philips Res. Rep. 22, 267 (1967).
  16. S. Kim, W. I. Lee, E. H. Lee, S. K. Hwang, and C. Lee. J Mater Sci. 42, 4845 (2007) https://doi.org/10.1007/s10853-006-0738-8
  17. Y. Igasaki and H. Kanma, Appl. Surf. Sci. 508, 169 (2001)
  18. S. K. Kim, W. I. Lee, E. H. Lee, S. K. Hwang, and C. M. Lee, J. Mat. Sci. 42, 4845 (2007) https://doi.org/10.1007/s10853-006-0738-8

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