Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Optical Properties of Transparent Electrode ZnO Thin Film Grown on Carbon Doped Silicon Oxide Film

탄소주입 실리콘 산화막 위에 성장한 투명전극 ZnO 박막의 광학적 특성

  • Oh, Teresa (School of Electronic and Information Engineering, Cheongju University)
  • 오데레사 (청주대학교 이공대학 반도체설계공학과)
  • Received : 2012.05.16
  • Accepted : 2012.06.15
  • Published : 2012.06.30
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Abstract

Zinc oxide (ZnO) films were deposited by an RF magnetron sputtering system with the RF power of 200W and 300W and flow rate of oxygen gases of 20 and 30 sccm, in order to research the growth of ZnO on carbon doped silicon oxide (SiOC) thin film. The reflectance of SiOC film on Si film deposited by the sputtering decreased with increasing the oxygen flow rate in the range of long wavelength. In comparison between ZnO/Si and ZnO/SiOC/Si thin film, the reflectance of ZnO/SiOC/Si film was inversed that of ZnO/Si film in the rage of 200~1000 nm. The transmittance of ZnO film increased with increasing the oxygen gas flow rate because of the transition from conduction band to oxygen interstitial band due to the oxygen interstitial (Oi) sites. The low reflectance and the high transmittance of ZnO film was suitable properties to use for the front electrode in the display or solar cell.

Keywords

References

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