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The Structural-Dependent Characteristics of Rashba Spin Transports in In0.5Ga0.5As/In0.5Al0.5As Heterojunctions

  • Received : 2011.04.25
  • Accepted : 2011.06.02
  • Published : 2011.08.25

Abstract

The growth and characterization of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ narrow-gap inverted high electron mobility transistor structures, developed as a candidate material for spin-injection devices, are presented in this study. We have grown samples possessing surface $In_{0.5}Ga_{0.5}As$ channels of different thicknesses (30 nm and 60 nm) both with and without a thin 3 nm $In_{0.5}Ga_{0.5}As$ cap layer by using molecular beam epitaxy. We then investigated the in-plane transport properties as well as the Rashba spin-orbit coupling constant of the two-dimensional electron gas confined at the heterojunction interface.

Keywords

References

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