한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제24권6호
  • /
  • Pages.468-472
  • /
  • 2011
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

RF 마그네트론 스퍼터법을 사용한 전도성 SrMoO3 박막 제조 및 전기전도특성 평가

Preparation of Conductive SrMoO3 Thin Films by RF Magnetron Sputtering and Evaluation of Their Electrical Conduction Properties

  • 유희욱 (군산대학교 신소재공학과) ;
  • 선호정 (군산대학교 신소재공학과)
  • Ryu, Hee-Uk (Department of Materials Science Engineering, Kunsan National University) ;
  • Sun, Ho-Jung (Department of Materials Science Engineering, Kunsan National University)
  • 투고 : 2011.01.19
  • 심사 : 2011.04.26
  • 발행 : 2011.06.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Conductive $SrMoO_3$ thin films were fabricated by RF magnetron sputtering with the powder-type sputtering target, and annealed for crystallization. When RTP (rapid thermal processing) in vacuum was applied, the fabricated thin films showed the mixed phases of $SrMoO_3$ and $SrMoO_4$, but $SrMoO_3$ phase could be promoted by the lowering of the working pressure during deposition. In order to eliminate $O_2$ gas during deposition and annealing, further lowering of the working pressure and furnace annealing in hydrogen atmosphere were tried. With the optimization of the deposition and annealing conditions, the thin film with nearly single-phase of $SrMoO_3$ was obtained, and it showed good electrical conduction properties with a low resistivity of $2.5{\times}10^{-3}{\Omega}{\cdot}cm$ at room temperature.

키워드

참고문헌

  1. D. P. Vijay and S. B. Desu, J. Electrochem. Soc., 140, 2640 (1993). https://doi.org/10.1149/1.2220877
  2. T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Appl. Phys. Lett., 65, 1522 (1994). https://doi.org/10.1063/1.112031
  3. M. S. Chen, J. M. Wu, and T. B. Wu, Jpn. J. Appl. Phys., 34, 4870 (1995). https://doi.org/10.1143/JJAP.34.4870
  4. T. Morimoto, O. Hidaka, K. Yamakawa, O. Arisumi, H. kanaya, T. Iwamoto, Y. Kumura, I. Kunishima, and S. I. Tanaka, Jpn. J. Appl. Phys., 39, 2110 (2000). https://doi.org/10.1143/JJAP.39.2110
  5. L. H. Bri×ner, J. Inorg. Nucl. Chem. 14, 225 (1960). https://doi.org/10.1016/0022-1902(60)80262-X
  6. H. Mizoguchi, K. Fukumi, N. Kitamura, T. Takeuchi, J. Hayakawa, H. Yamanaka, H. Yanagi, H. Hosono, and H. Kawazoe, J. Appl. Phys., 85, 6502 (1999). https://doi.org/10.1063/1.370288
  7. H. H. Wang, G. Z. Yang, D. F. Chui, H. B. Lu, T. Zhao, F. Chen, Y. L. Zhou, Z. H. Chen, Y. C. Lan, Y. Ding, L. Chen, X. L. Chen, and J. K. Liang, J. Vac. Sci. Technol., A19, 930 (2001).