Journal of electromagnetic engineering and science

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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Design of a 1~10 GHz High Gain Current Reused Low Noise Amplifier in 0.18 ㎛ CMOS Technology

  • Seong, Nack-Gyun (Department of Electronics and Computer Engineering, Hanyang University) ;
  • Jang, Yo-Han (Department of Electronics and Computer Engineering, Hanyang University) ;
  • Choi, Jae-Hoon (Department of Electronics and Computer Engineering, Hanyang University)
  • Received : 2010.12.24
  • Accepted : 2011.02.07
  • Published : 2011.03.31
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Abstract

In this paper, we propose a high gain, current reused ultra wideband (UWB) low noise amplifier (LNA) that uses TSMC 0.18 ${\mu}m$ CMOS technology. To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilized in the first stage. A ${\pi}$-type LC network is adopted in the second stage to achieve sufficient gain over the entire frequency band. The proposed UWB LNA has a voltage gain of 12.9~18.1 dB and a noise figure (NF) of 4.05~6.21 dB over the frequency band of interest (1~10 GHz). The total power consumption of the proposed UWB LNA is 10.1 mW from a 1.4 V supply voltage, and the chip area is $0.95{\times}0.9$ mm.

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