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Physics-Based SPICE Model of a-InGaZnO Thin-Film Transistor Using Verilog-A

  • Jeon, Yong-Woo (School of Electrical Engineering, Kookmin University) ;
  • Hur, In-Seok (School of Electrical Engineering, Kookmin University) ;
  • Kim, Yong-Sik (School of Electrical Engineering, Kookmin University) ;
  • Bae, Min-Kyung (School of Electrical Engineering, Kookmin University) ;
  • Jung, Hyun-Kwang (School of Electrical Engineering, Kookmin University) ;
  • Kong, Dong-Sik (School of Electrical Engineering, Kookmin University) ;
  • Kim, Woo-Joon (School of Electrical Engineering, Kookmin University) ;
  • Kim, Jae-Hyeong (School of Electrical Engineering, Kookmin University) ;
  • Jang, Jae-Man (School of Electrical Engineering, Kookmin University) ;
  • Kim, Dong-Myong (School of Electrical Engineering, Kookmin University) ;
  • Kim, Dae-Hwan (School of Electrical Engineering, Kookmin University)
  • 투고 : 2011.04.29
  • 발행 : 2011.09.30

초록

In this work, we report the physics-based SPICE model of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) and demonstrate the SPICE simulation of amorphous InGaZnO (a-IGZO) TFT inverter by using Verilog-A. As key physical parameter, subgap density-of-states (DOS) is extracted and used for calculating the electric potential, carrier density, and mobility along the depth direction of active thin-film. It is confirmed that the proposed DOS-based SPICE model can successfully reproduce the voltage transfer characteristic of a-IGZO inverter as well as the measured I-V characteristics of a-IGZO TFTs within the average error of 6% at $V_{DD}$=20 V.

키워드

참고문헌

  1. H.-H. Lu et al, "32-inch LCD Panel Using Amorphous Indium-Gallium-Zinc-Oxide TFTs," in SID Int. Symp. Digest Tech. Papers, pp.1136-1138, 2010.
  2. Y. G. Mo et al, "Amorphous Oxide TFT Backplane for Large Size AMOLED TVs," in SID Int. Symp. Digest Tech. Papers, pp.1037-1040, 2010.
  3. H. Yin et al, "High Performance Low Voltage Amorphous Oxide TFT Enhancement/Depletion Inverter through Uni-/Bi-Layer Channel Hybrid Integration," in IEDM Tech. Dig.2009, pp.199-202.
  4. M.-J. Lee et al, "Low temperature grown transition metal oxide based storage materials and oxide transistor for high density nonvolatile memory," Advanced Functional Materials, Vol.19, No.10, pp.1587-1593, May, 2009. https://doi.org/10.1002/adfm.200801032
  5. Y. W. Jeon et al, "Subgap Density of States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)," IEEE Transactions on Electron Devices, Vol.57, No.1, pp.2988-3000, Nov., 2010. https://doi.org/10.1109/TED.2010.2072926
  6. S. Lee et al, "Extraction of Subgap Density of States in Amorphous InGaZnO Thin Film Transistors by Using Multi-Frequency Capacitance-Voltage Characteristics," IEEE Electron Device. Letters, Vol.31, No.3, pp.231-233, Mar., 2010 https://doi.org/10.1109/LED.2009.2039634

피인용 문헌

  1. Investigating electron depletion effect in amorphous indium–gallium–zinc-oxide thin-film transistor with a floating capping metal by technology computer-aided design simulation and leakage reduction vol.53, pp.6, 2014, https://doi.org/10.7567/JJAP.53.064302
  2. Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors vol.64, pp.8, 2017, https://doi.org/10.1109/TED.2017.2717935