References
- D. Mc Carthy, R. Duane, M. O'Shea, R. Duffy, K. Mc Carthy, A. M. Kelliher, A. Concannon, and A. Mathewson, IEEE Trans. Electron Devices 50, 1708 (2003) [DOI: 10.1109/ted.2003.814988].
- J. Raszka, M. Advani, V. Tiwari, L. Varisco, N. D. Hacobian, A. Mittal, M. Han, A. Shirdel, and A. Shubat, IEEE International Solid-State Circuits Conference (ISSCC). Digest of Technical Papers (San Francisco, CA 2004 Feb. 15-19) p. 46. [DOI: 10.1109/ ISSCC.2004.1332586].
- C. Kuo, T. J. King, and C. Hu, IEEE Trans. Electron Devices 51, 282 (2004) [DOI: 10.1109/ted.2003.821702].
- J. H. Oh, H. J. Chung, N. I. Lee, and C. H. Han, IEEE Electron Device Lett. 21, 304 (2000) [DOI: 10.1109/55.843158].
- K. Y. Na and Y. S. Kim, IEEE Electron Device Lett. 27, 294 (2006) [DOI: 10.1109/led.2006.871838].
- K. Ohsaki, N. Asamoto, and S. Takagaki, “A Single Poly EEPROM Cell Structure for Use in Standard CMOS Processes,” IEEE Journal of Solid-State Circuits, vol. 29, no. 3, pp. 331-336, Mar. 1994. https://doi.org/10.1109/4.278354
- H. C. Sung, T. F. Lei, T. H. Hsu, S. W. Wang, Y. C. Kao, Y. T. Lin, and C. S. Wang, IEEE Electron Device Lett. 26, 770 (2005) [DOI: 10.1109/led.2005.856014].
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