DOI QR코드

DOI QR Code

The role of EL2 in the infrared transmission images of defects in semi-insulating GaAs

  • Kang, Seong-Jun (Dept. of Information and Communication Engineering, Mokpo National University) ;
  • Lee, Sung-Seok (Dept. of Information and Communication Engineering, Mokpo National University)
  • 투고 : 2011.10.13
  • 심사 : 2011.11.30
  • 발행 : 2011.12.31

초록

Infrared transmission images from GaAs semi insulating wafers were considered for years as directly related to the quantum absorption by electrons on fundamental states of deep centers, especially EL2. The satisfying correspondence of these images with the dislocations revealed by etching or X ray topography or infrared tomography led to the opinion that a strong concentration of EL2 centers was to be expected in the immediate vicinity of the dislocations. More recent work indicates that contrary to the expected behavior the photoqu$\acute{e}$nching of transmission images at T=80K does not appreciably change the image structure itself but more largely the uniform background level of absorption. Such investigations show that the transmission images of isolated dislocations (Indium doped materials) or cell structures of tangled dislocations (undoped materials) can be partly attributed to scattered light; similar operation at T=10K removes the dark features associated to EL2 but still preserves the skeleton of the pattern which is due to scattering. A result of the measurements is that dislocations must not be considered any longer as inexhaustive EL2 reservoirs. The lifetime of the photoqu$\acute{e}$nching mechanism is shown to vary differently for EL2 centers located close to the dislocations or in the matrix. In this paper we will develop the details of infrared image photoqu$\acute{e}$nching experiments in the vicinity of dislocations; undoped and In doped GaAs materials will be shown. These results will be discussed in the light of surface etching experiments.

키워드

참고문헌

  1. H.J. von Bardeleben, "Metastable state of EL2 defect in GaAs, phys. Rev. B, vol. 40, no. 18, pp. 12546-12549, 1989. https://doi.org/10.1103/PhysRevB.40.12546
  2. J.P. Fillard, "Reconnaissance des defauts et traitementd`images pour les composesIII-V", Annales des Telecommunications vol. 42, no. 3-4, mars-avril, pp. 149-180, 1987.
  3. Castagne"EL2 related levels in GaAs-SI transmission and dispersion in infrared imaging", solid state commun. 54, 653, 1985 https://doi.org/10.1016/0038-1098(85)90099-7
  4. P. Gall, J.P Fillard, M Castagne, "Microtomography observation of precipitates in semi-insulating GaAs materials", Jour. Appl. Phys. 64, pp. 5161-5167, 1988 https://doi.org/10.1063/1.342426
  5. J.P. Fillard, J. Bonnafe, M. Castagne, Jour. Appl. Phys. 56, pp. 3020-3025, 1984. https://doi.org/10.1063/1.333780
  6. J.P. Fillard, J. Bonnafe, M. Castagne, Jour. Appl. Phys. Let. A35, pp149-152, 1984.
  7. L. Samuelson and P. Omling, "Optical properties of EL2 in GaAs", Phys. Rev. B 34, pp. 5603-5608, 1986 https://doi.org/10.1103/PhysRevB.34.5603
  8. M.R. Brozel, I. Grant, D.J. Stirland, "Direct observation of the principal deep level (EL2) in undoped semi-insulating GaAs", Appl. Phys. Lett. 42(7), April, pp. 610-612, 1983. https://doi.org/10.1063/1.94019
  9. Ogawa T DRIP I symposium Mat Sc. Monographs 31 1 J.P. Fillard Ed, 1985.
  10. M.S. Skolnick and M.R. Brozel, "Distinction between near infrared optical absorption and light scattering in semi-insulating GaAs", Appl. Phys. Lett. 48(5), February, pp. 341-343, 1986. https://doi.org/10.1063/1.96545
  11. S.J.Kang, "Contribution al'etude du center EL2 dansGaAs semiisolant par photoextinction des images de transmission infrarouge", Ph.D dissertation, U.S.T.L.(Montpellier II), France, 1990.
  12. J.C. Parker and R. Bray, "Analysis of photoassisted thermal recovery of metastable EL2 defects in GaAs", Phys. Rev. B, 15 April, pp. 6368-6376, 1988.
  13. Hans J. Queisser, "Reversal of contrast for infrared absorption of deep levels in semi-insulating GaAs", Appl. Phy. Lett. 46(8), 15 April, pp 757-759, 1985 https://doi.org/10.1063/1.95498

피인용 문헌

  1. Infrared Imaging and a New Interpretation on the Reverse Contrast Images in GaAs Wafer vol.20, pp.11, 2016, https://doi.org/10.6109/jkiice.2016.20.11.2085