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MOCVD 방법에 의한 Si 기판위 GaN 나노선의 성장

GaN Nanowire Growth on Si Substrate by Utilizing MOCVD Methods

  • Woo, Shi-Gwan (Department of Physics, Chungnam National University) ;
  • Shin, Dae-Keun (Department of Physics, Chungnam National University) ;
  • O, Byung-Sung (Department of Physics, Chungnam National University) ;
  • Lee, Hyung-Gyoo (School of Electronics Engineering, Chungbuk National University)
  • 투고 : 2010.07.14
  • 심사 : 2010.10.24
  • 발행 : 2010.11.01

초록

We have grown GaN nanowires by the low pressure MOCVD method on Ni deposited oxidized Si surface and have established optimum conditions by observing surface microstructure and its photoluminescence. Optimum growth temperature of $880^{\circ}C$, growth time of 30 min, TMG source flow rate of 10 sccm have resulted in dense nanowires on the surface, however further increase of growth time or TMG flow rate has not increased the length of nanowire but has formed nanocrystals. On the contrary, the increase of ammonia flow has increased the length of nanowires and the coverage of nanowire over the surface. The shape of nanowire is needle-like with a Ni droplet at its tip; the length is tens of micron with more than 40 nm in diameter. Low temperature photoluminescence obtained from the sample at optimum growth condition has revealed several peaks related to exciton decay near band-edge, but does not show any characteristic originated from one dimensional quantum confinement. Strong and broad luminescence at 2.2 eV is observed from dense nanowire samples and this suggests that the broad band is related to e-h recombination at the surface state in a nanowire. The current result is implemented to the nanowire device fabrication by nanowire bridging between micro-patterned neighboring Ni catalysis islands.

키워드

참고문헌

  1. W. Lu and C.M. Lieber, NAT MATER. 6, 841 (2007). https://doi.org/10.1038/nmat2028
  2. A. M. Morales and C. M. Lieber, Science 279, 208 (1998). https://doi.org/10.1126/science.279.5348.208
  3. X. Duan and C. M. Lieber, Adv. Mater. 12, 298 (2000). https://doi.org/10.1002/(SICI)1521-4095(200002)12:4<298::AID-ADMA298>3.0.CO;2-Y
  4. Z. Zhong, F. Qian, D. Wang, and C. M. Lieber, Nano Letters 3, 343 (2003). https://doi.org/10.1021/nl034003w
  5. D. J. Sirbuly et al., PNAS, 102, 7800 (2005). https://doi.org/10.1073/pnas.0408641102
  6. W. I. Park, D. H. Kim, S.-W. Jung, and Gyu-Chul Yi, Appl. Phys. Lett. 80, 4232 (2002). https://doi.org/10.1063/1.1482800
  7. Y. Inoue, A. Tajima, A. Ishida, and H. Mimur, Phys. Stat. Sol. (c) 5, 3001 (2006). https://doi.org/10.1002/pssc.200779260
  8. T. Bryllert et al., IEEE Elec. Dev. Lett. 27, 323 (2006). https://doi.org/10.1109/LED.2006.873371
  9. W. I. Park et al., Adv. Mater. 14, 1841 (2002). https://doi.org/10.1002/adma.200290015
  10. G. T. Wang et al., Nanotechnology 17, 5773 (2006). https://doi.org/10.1088/0957-4484/17/23/011
  11. J. Yoo et al., Appl. Phys. Lett. 89, 043124 (2006). https://doi.org/10.1063/1.2243710
  12. A. Motayed et al., Appl. Phys. Lett. 90, 043104 (2007). https://doi.org/10.1063/1.2434153
  13. N. Peyghambarian, S. W. Koch, and A. Mysyrowicz, "Introduction to Semiconductor Optics," (Prentice-Hall, New York, 1993) p. 141
  14. I. Shalish, H. Temkin, and V. Narayanamurti, Phys. Rev. B 69, 245401 (2004). https://doi.org/10.1103/PhysRevB.69.245401
  15. I. Shalish, et al., Phys. Rev. B 59, 9748 (1999). https://doi.org/10.1103/PhysRevB.59.9748

피인용 문헌

  1. Growth of oriented GaN nanowires by controlling nucleation conditions vol.51, pp.12, 2016, https://doi.org/10.1002/crat.201600263