Journal of information and communication convergence engineering

  • 제8권4호
  • /
  • Pages.453-456
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  • 2010
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  • 2234-8255(pISSN)
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  • 2234-8883(eISSN)
한국정보통신학회 (The Korea Institute of Information and Commucation Engineering)
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The study on the thickness change of tantalum oxide as voltage drop in electrolyte

  • Hur, Chang-Wu (Department of Electronics, Mokwon University) ;
  • Lee, Kyu-Chung (Department of Information Technology at Sungkyul University)
  • 투고 : 2010.07.01
  • 심사 : 2010.07.01
  • 발행 : 2010.08.31
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초록

Tantalum oxide ($Ta_2O_5$) films are of considerable interest for a range of application, including optical waveguide devices, high temperature resistors, and oxygen sensors. In this paper, we establish an anode oxidation process of tantalum thin film. The voltage drop in the electrolyte is affected not in voltage change but in current change. If the voltage drop in the electrolyte is same with cathode oxidation voltage, the current changes logarithmically in proportion to the voltage drop in interface of tantalum oxide and electrolyte. As a result of the measurement on the electrical property of tantalum oxide thin film, when the thickness of the insulator film is $1500{\AA}$, the breakdown voltage is 350volts and dielectric constant is 29.

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참고문헌

  1. Chang W. Hur, " Method of Making Thin Film Transistors", United States Patent, Patent No.5,306,653, Apr. 1994.
  2. R.V.R. Murthy, "Mechanisms underlying leakage current in inverted staggered a-Si:H thin film transistors", Fourth Symp. on Thin Film Transistor Technologies, Boston, Nov. 1-6, 1998.
  3. Lee Gyu-jeong, Ryu Gwang-ryeol, Chang W. Hur, " the oxide semiconductor thin film gas sensor array", the Korea marine information communication learned society dissertation paper vol.6,No.2, pp. 315-322, Mar. 2002.
  4. Chang W. Hur, " The formation of the thin film having thickness and the hydrogenated amorphous silicon", the Korea marine information communication learned society dissertation paper vol.7, No.3, and pp.468-473, June 2003.
  5. Yun Jae-seok, Chang W. Hur, "the metal plasma of the n-MOSFET according to the gate oxidation film", the Korea marine information communication learned society dissertation paper vol.3, No.2, and pp.471-475, June 1999.