DOI QR코드

DOI QR Code

Photoluminescence of Hexagonal Boron Nitride (h-BN) Film

  • Jin, Moon-Seog (Dept. of Optometry and Optic Science, Dongshin Univerity) ;
  • Kim, Nam-Oh (Dept. of Electricity at Chosun University College of Science & Technology)
  • 투고 : 2010.03.23
  • 심사 : 2010.07.21
  • 발행 : 2010.11.01

초록

Hexagonal boron nitride (BN) films were prepared. The process involved, spraying BN powder-dispersed $H_3BO_4-BCl_3$-ethyl alcohol solution on quartz plates, and the drying off quartz plates before, and annealing at $1070^{\circ}C$ in a nitrogen atmosphere. The optical energy band gap of the BN films was 5.28 eV. Photoluminescence peaks with energies of 3.44, 3.16, 2.97, and 2.35 eV at 10 K were observed and analyzed. Accordingly, these have resulted from donor-acceptor pair recombinations.

키워드

참고문헌

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피인용 문헌

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  2. Synthesis micro-scale boron nitride nanotubes at low substrate temperature vol.6, pp.7, 2016, https://doi.org/10.1063/1.4959194
  3. Blue–green luminescent carbon nanodots produced in a silica matrix vol.91, 2015, https://doi.org/10.1016/j.carbon.2015.04.062
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  8. Electronic and optical properties of h-BN nanosheet: A first principles calculation vol.58, 2015, https://doi.org/10.1016/j.diamond.2015.07.008
  9. Spectrally resolved thermoluminescence in UV excited hexagonal boron nitride nanopowder vol.1115, pp.1742-6596, 2018, https://doi.org/10.1088/1742-6596/1115/5/052025