Journal of Electrical Engineering and Technology

  • 제5권4호
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  • Pages.637-639
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  • 2010
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  • 1975-0102(pISSN)
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  • 2093-7423(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
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Photoluminescence of Hexagonal Boron Nitride (h-BN) Film

  • Jin, Moon-Seog (Dept. of Optometry and Optic Science, Dongshin Univerity) ;
  • Kim, Nam-Oh (Dept. of Electricity at Chosun University College of Science & Technology)
  • Received : 2010.03.23
  • Accepted : 2010.07.21
  • Published : 2010.11.01
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Abstract

Hexagonal boron nitride (BN) films were prepared. The process involved, spraying BN powder-dispersed $H_3BO_4-BCl_3$-ethyl alcohol solution on quartz plates, and the drying off quartz plates before, and annealing at $1070^{\circ}C$ in a nitrogen atmosphere. The optical energy band gap of the BN films was 5.28 eV. Photoluminescence peaks with energies of 3.44, 3.16, 2.97, and 2.35 eV at 10 K were observed and analyzed. Accordingly, these have resulted from donor-acceptor pair recombinations.

Keywords

References

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