Transactions on Electrical and Electronic Materials

  • 제11권4호
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  • Pages.178-181
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  • 2010
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Transient Characteristic of a Metal-Oxide Semiconductor Field Effect Transistor in an Automotive Regulator in High Temperature Surroundings

  • Kang, Chae-Dong (Department of Mechanical Engineering and Research Center of Industrial Technology, Chonbuk National University) ;
  • Shin, Kye-Soo (Daewoo Electronic Components Co. Ltd.)
  • 투고 : 2010.03.02
  • 심사 : 2010.07.05
  • 발행 : 2010.08.25
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초록

An automotive IC voltage regulator which consists of one-chip based on a metal-oxide semiconductor field effect transistor (MOSFET) is investigated experimentally with three types of packaging. The closed type is filled with thermal silicone gel and covered with a plastic lid on the MOSFET. The half-closed type is covered with a plastic case but without thermal silicone gel on the MOSFET. Opened type is no lid without thermal silicone gel. In order to simulate the high temperature condition in engine bay, the operating circuit of the MOSFET is constructed and the surrounding temperature is maintained at $100^{\circ}C$. In the overshoot the maximum was mainly found at the half-closed packaging and the magnitude is dependent on the packaging type and the surrounding temperature. Also the impressed current decreased exponentially during the MOSFET operation.

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