Laser Solutions (한국레이저가공학회지)
- Volume 13 Issue 1
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- Pages.6-10
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- 2010
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- 1229-0963(pISSN)
Laser Induced Crystallizatioo of Amorphous Si Films on Glass Substrates
유리 기판을 이용한 비정질 실라콘 박막의 결정화
- Kim, P.K. (Department of Mechatronics, Gwangju Institute of Science & Technology) ;
- Moon, S.J. (School of Mechanical Engineering, Hanyang University) ;
- Jeong, S.H. (Department of Mechatronics, Gwangju Institute of Science & Technology)
- Published : 2010.03.31
Abstract
Crystallization of 100 nm thick amorphous silicon (a-Si) films on glass substrates was carried out by using a double laser irradiation method. Depending on a-Si deposition method or glass types, the quality of crystallized silicon film varies significantly. For a-Si films deposited with high concentration of impurities, large grains or high crystallinity can not be achieved. Crystallization with different a-Si deposition methods confirmed that for the polycrystallization of a-Si films on glass substrates, controlling the impurity density during substrate preparation is critical.