통합자연과학논문집 (Journal of Integrative Natural Science)

조선대학교 기초과학연구원 (The Basic Science Institute Chosun University)
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Study on Thickness of Porous Silicon Layer According to the Various Anodization Times

  • 투고 : 2010.12.06
  • 심사 : 2010.12.23
  • 발행 : 2010.12.31
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초록

As the etching time is varied, the change of thickness of the porous silicon layers was successfully investigated. The thickness of the PSi layer as a function of anodization time for a p-type substrate that is etched at a constant current density of 50 $mA/cm^2$ in a 35% hydrofluoric acid solution shows a linear relationship between the etching time and the thickness of the PSi layer.

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참고문헌

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